N-Channel 100V 4.2A (Ta), 5.5A (Tc) 3.1W (Ta), 29W (Tc) Surface Mount TO-252AA
N-Channel 100V 4.2A (Ta), 5.5A (Tc) 3.1W (Ta), 29W (Tc) Surface Mount TO-252AA
N-Channel 100V 4.2A (Ta), 5.5A (Tc) 3.1W (Ta), 29W (Tc) Surface Mount TO-252AA
MOSFETs 100/20V PT5 N-Chan PowerTrench MOSFET Product overview: FDD86113LZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD86113LZ can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066945-FDD86113LZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 4.2A (Ta), 5.5A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 6nC @ 10V
Max Input Capacitance: 285pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 104 mOhm @ 4.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFET, N-CH, 5.5A, 100V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.087ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes
MOSFET N-CH 100V 4.2A/5.5A DPAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDD86113LZFSDKR-ND | 2088-FDD86113LZ | 066945-FDD86113LZ | 07AH3900 | FDD86113LZ |
| Product Name | Single FETs, MOSFETs | 20V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD86113LZ | Mosfet, N-Ch, 5.5A, 100V, To-252; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Reel | SOT3; TO-252 (DPAK); D-PAK (TO-252AA) | TO-3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
| MOSFET Operating Mode | Enhancement | ||||
| PD | 3.1 milliwatts | 3100 to 29000 milliwatts | |||
| Packing Method | Reel | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
