MOSFET N-CH 100V 12.5A/50A DPAK
MOSFETs 100V N-Channel PowerTrench MOSFET Product overview: FDD86110 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD86110 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038120-FDD86110
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Family Name: FDD86110
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12.5A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 2265pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10.2 mOhm @ 12.5A, 10V
Alternative Parts (Cross-Reference): IPD12CN10NGXT; IPD70N10S312XT; IPD70N10S3L12XT; IPD12CN10NGBUMA1;
Introduction Date: March 15, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA
N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA
N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA
MOSFET 100V N-Channel PowerTrench MOSFET
MOSFET, N-CH, 100V, 50A, 150DEG C, 127W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:50A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V; Power Dissipation:127W RoHS Compliant: Yes
MOSFET N-CH 100V 12.5A/50A DPAK
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDD86110 | 2088-FDD86110 | 1038120-FDD86110 | FDD86110CT-ND | FDD86110 | 88T3249 | FDD86110 |
| Product Name | Single FETs, MOSFETs | N-Channel 100V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD86110 | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 100V, 50A, 150Deg C, 127W; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 12500 milliamps | 50000 milliamps | |||||
| PD | 3100 milliwatts | 3.1 milliwatts | 3100 to 127000 milliwatts | 127000 milliwatts |
