Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038120-FDD86110
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Family Name: FDD86110
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12.5A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 2265pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10.2 mOhm @ 12.5A, 10V
Alternative Parts (Cross-Reference): IPD12CN10NGXT; IPD70N10S312XT; IPD70N10S3L12XT; IPD12CN10NGBUMA1;
Introduction Date: March 15, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA
N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA
N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA
MOSFET N-CH 100V 12.5A/50A DPAK
MOSFET 100V N-Channel PowerTrench MOSFET
MOSFET N-CH 100V 12.5A/50A DPAK
MOSFET, N-CH, 100V, 50A, 150DEG C, 127W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:50A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V; Power Dissipation:127W RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1038120-FDD86110 | FDD86110CT-ND | FDD86110 | FDD86110 | FDD86110 | 88T3249 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD86110 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 50A, 150Deg C, 127W; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | ||||
| PD | 3100 to 127000 milliwatts | 3100 milliwatts | 127000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
