onsemi Single FETs, MOSFETs FDD86110

Description
N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet
Description
N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDD86110CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD86110CT-ND
Single FETs, MOSFETs FDD86110CT-ND
N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA

N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD86110TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD86110TR-ND
Single FETs, MOSFETs FDD86110TR-ND
N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA

N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD86110DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD86110DKR-ND
Single FETs, MOSFETs FDD86110DKR-ND
N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA

N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD86110 - 1038120-FDD86110 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD86110
1038120-FDD86110
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD86110 1038120-FDD86110
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038120-FDD86110 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 127W (Tc) Family Name: FDD86110 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 12.5A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 2265pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10.2 mOhm @ 12.5A, 10V Alternative Parts (Cross-Reference): IPD12CN10NGXT; IPD70N10S312XT; IPD70N10S3L12XT; IPD12CN10NGBUMA1; Introduction Date: March 15, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038120-FDD86110
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Family Name: FDD86110
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12.5A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 2265pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10.2 mOhm @ 12.5A, 10V
Alternative Parts (Cross-Reference): IPD12CN10NGXT; IPD70N10S312XT; IPD70N10S3L12XT; IPD12CN10NGBUMA1;
Introduction Date: March 15, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDD86110 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDD86110
Single FETs, MOSFETs FDD86110
MOSFET N-CH 100V 12.5A/50A DPAK

MOSFET N-CH 100V 12.5A/50A DPAK

Supplier's Site Datasheet
Mosfet, N-Ch, 100V, 50A, 150Deg C, 127W; Channel Type Onsemi - 88T3249 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 50A, 150Deg C, 127W; Channel Type Onsemi
88T3249
Mosfet, N-Ch, 100V, 50A, 150Deg C, 127W; Channel Type Onsemi 88T3249
MOSFET, N-CH, 100V, 50A, 150DEG C, 127W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:50A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V; Power Dissipation:127W RoHS Compliant: Yes

MOSFET, N-CH, 100V, 50A, 150DEG C, 127W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:50A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V; Power Dissipation:127W RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD86110 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD86110
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD86110
MOSFET N-CH 100V 12.5A/50A DPAK

MOSFET N-CH 100V 12.5A/50A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDD86110
MOSFET FDD86110
MOSFET 100V N-Channel PowerTrench MOSFET

MOSFET 100V N-Channel PowerTrench MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDD86110CT-ND 1038120-FDD86110 FDD86110 88T3249 FDD86110 FDD86110
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD86110 Single FETs, MOSFETs Mosfet, N-Ch, 100V, 50A, 150Deg C, 127W; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-PAK (TO-252AA) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3 Surface Mount
V(BR)DSS 100 volts 100 volts
PD 3100 to 127000 milliwatts 3100 milliwatts 127000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - 94-3250TR-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type DirectFET™ Isometric MQ
View Details
2 suppliers
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UF3C065080B3 - Shenzhen Shengyu Electronics Technology Limited
Specs
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
View Details
2 suppliers