MOSFET N-CH 100V 8A/36A DPAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066944-FDD86102
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Family Name: FDD86102
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 8A (Ta), 36A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 1035pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): SUD50N10-18P-E3; IRFR540Z; IPD25CN10N G; IRFR3412PBF;
Introduction Date: July 28, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
N-Channel 100V 8A (Ta), 36A (Tc) 3.1W (Ta), 62W (Tc) Surface Mount TO-252AA
N-Channel 100V 8A (Ta), 36A (Tc) 3.1W (Ta), 62W (Tc) Surface Mount TO-252AA
N-Channel 100V 8A (Ta), 36A (Tc) 3.1W (Ta), 62W (Tc) Surface Mount TO-252AA
MOSFET N-CH 100V 8A/36A DPAK
MOSFET N-CH 100V 8A DPAK
MOSFET 100V N-Channel PowerTrench
MOSFET, N CHANNEL, 100V, 36A, TO252; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:36A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.1V RoHS Compliant: Yes
100V 24mΩ@10V,8A 4V@250uA N Channel TO-252(DPAK) MOSFETs ROHS
| ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDD86102 | 066944-FDD86102 | 7599471P | 1662646 | FDD86102CT-ND | FDD86102 | 598-FDD86102 | FDD86102 | 88T3247 | FDD86102 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD86102 | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 100V 8A DPAK | MOSFET | Mosfet, N Channel, 100V, 36A, To252; Channel Type Onsemi | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | ||||||
| IDSS | 8000 milliamps | 36000 milliamps | ||||||||
| PD | 3100 milliwatts | 3100 to 62000 milliwatts | 3100 milliwatts | 3100 milliwatts |
