onsemi Single FETs, MOSFETs FDD8586

Description
N-Channel 20V 35A (Tc) 77W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet
Description
N-Channel 20V 35A (Tc) 77W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDD8586TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD8586TR-ND
Single FETs, MOSFETs FDD8586TR-ND
N-Channel 20V 35A (Tc) 77W (Tc) Surface Mount TO-252AA

N-Channel 20V 35A (Tc) 77W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8586 - 110490-FDD8586 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8586
110490-FDD8586
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8586 110490-FDD8586
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 110490-FDD8586 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 77W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 2480pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 110490-FDD8586
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 77W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 2480pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
20V 35A MOSFET Transistor
278-FDD8586
20V 35A MOSFET Transistor 278-FDD8586
MOSFET N-CH 20V 35A TO252AA Product overview: FDD8586 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD8586 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 35A TO252AA Product overview: FDD8586 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD8586 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD8586 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD8586
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD8586
MOSFET N-CH 20V 35A TO252AA

MOSFET N-CH 20V 35A TO252AA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDD8586TR-ND 110490-FDD8586 278-FDD8586 FDD8586
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8586 20V 35A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-PAK (TO-252AA) Bulk TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 20 volts
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