onsemi Single FETs, MOSFETs FDD850N10L

N-Channel 100V 15.7A (Tc) 50W (Tc) Surface Mount TO-252AA

N-Channel 100V 15.7A (Tc) 50W (Tc) Surface Mount TO-252AA

MOSFETs 100V N-Channel PowerTrench MOSFET Product overview: FDD850N10L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD850N10L can be used for catalog matching and distributor lookup.

MOSFET, Fairchild, FDD850N10L

MOSFET, Fairchild, FDD850N10L

MOSFET, Fairchild, FDD850N10L

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066943-FDD850N10L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-5
Dimension: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 15.3A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 28.9nC @ 10V
Max Input Capacitance: 1465pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 75 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

MOSFET N-CH 100V 15.7A DPAK