POWER FIELD-EFFECT TRANSISTOR, 9 Product overview: FDD8451 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD8451 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066942-FDD8451
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 9A (Ta), 28A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 990pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
N-Channel 40V 9A (Ta), 28A (Tc) 30W (Tc) Surface Mount TO-252AA
N-Channel 40V 9A (Ta), 28A (Tc) 30W (Tc) Surface Mount TO-252AA
MOSFET Transistor, N Channel, 28 A, 40 V, 19 mohm, 10 V, 2.1 V RoHS Compliant: Yes
MOSFET N-CH 40V 9A/28A DPAK
MOSFET 40V N-Ch PowerTrench MOSFET
POWER FIELD-EFFECT TRANSISTOR, 9
MOSFET N-CH 40V 9A/28A DPAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FDD8451 | 066942-FDD8451 | FDD8451TR-ND | 95W3160 | FDD8451 | FDD8451 | FDD8451 |
| Product Name | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8451 | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 28 A, 40 V, 19 Mohm, 10 V, 2.1 V Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0290 kS | ||||||
| PD | 30 milliwatts | 30000 milliwatts | 30000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
