Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066942-FDD8451
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 9A (Ta), 28A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 990pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
N-Channel 40V 9A (Ta), 28A (Tc) 30W (Tc) Surface Mount TO-252AA
N-Channel 40V 9A (Ta), 28A (Tc) 30W (Tc) Surface Mount TO-252AA
N-Channel 40V 9A (Ta), 28A (Tc) 30W (Tc) Surface Mount TO-252AA
POWER FIELD-EFFECT TRANSISTOR, 9
MOSFET N-CH 40V 9A/28A DPAK
MOSFET 40V N-Ch PowerTrench MOSFET
MOSFET N-CH 40V 9A/28A DPAK
MOSFET Transistor, N Channel, 28 A, 40 V, 19 mohm, 10 V, 2.1 V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 066942-FDD8451 | FDD8451TR-ND | FDD8451 | FDD8451 | FDD8451 | 95W3160 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8451 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 28 A, 40 V, 19 Mohm, 10 V, 2.1 V Rohs Compliant Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 40 volts | 40 volts | ||||
| PD | 30000 milliwatts | 30000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
