onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8426H FDD8426H

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038111-FDD8426H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-4L
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 12A, 10A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 2735pF @ 20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial

Mosfet Array N and P-Channel 40V 12A, 10A 1.3W Surface Mount TO-252 (DPAK)

Power Field-Effect Transistor Product overview: FDD8426H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDD8426H can be used for catalog matching and distributor lookup.