onsemi FET, MOSFET Arrays FDD8426H

Description
Mosfet Array N and P-Channel 40V 12A, 10A 1.3W Surface Mount TO-252 (DPAK)
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Description
Mosfet Array N and P-Channel 40V 12A, 10A 1.3W Surface Mount TO-252 (DPAK)
Request a Quote Datasheet

Suppliers

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Product
Description
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FET, MOSFET Arrays - FDD8426H-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDD8426H-ND
FET, MOSFET Arrays FDD8426H-ND
Mosfet Array N and P-Channel 40V 12A, 10A 1.3W Surface Mount TO-252 (DPAK)

Mosfet Array N and P-Channel 40V 12A, 10A 1.3W Surface Mount TO-252 (DPAK)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8426H - 1038111-FDD8426H - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8426H
1038111-FDD8426H
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8426H 1038111-FDD8426H
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038111-FDD8426H Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252-4L Maximum Power Dissipation: 1.3W Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 12A, 10A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 53nC @ 10V Max Input Capacitance: 2735pF @ 20V Maximum Rds On at Id,Vgs: 12 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038111-FDD8426H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-4L
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 12A, 10A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 2735pF @ 20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD8426H - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD8426H
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD8426H
MOSFET N/P-CH 40V 12A/10A TO252

MOSFET N/P-CH 40V 12A/10A TO252

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDD8426H-ND 1038111-FDD8426H FDD8426H
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8426H Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type TO-252 (DPAK); TO-252-5, DPAK (4 Leads + Tab), TO-252AD SOT3; TO-252 (DPAK); TO-252-4L
Polarity P-Channel
V(BR)DSS 40 volts
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