onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N50TM FDD6N50TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066938-FDD6N50TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 16.6nC @ 10V Max Input Capacitance: 9400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 900 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066938-FDD6N50TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 16.6nC @ 10V Max Input Capacitance: 9400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 900 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N50TM - 066938-FDD6N50TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N50TM
066938-FDD6N50TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N50TM 066938-FDD6N50TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066938-FDD6N50TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 16.6nC @ 10V Max Input Capacitance: 9400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 900 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066938-FDD6N50TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 16.6nC @ 10V
Max Input Capacitance: 9400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 900 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDD6N50TMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD6N50TMTR-ND
Single FETs, MOSFETs FDD6N50TMTR-ND
N-Channel 500V 6A (Tc) 89W (Tc) Surface Mount TO-252AA

N-Channel 500V 6A (Tc) 89W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Singapore
500V 6A MOSFET Transistor
2088-FDD6N50TM
500V 6A MOSFET Transistor 2088-FDD6N50TM
MOSFETs 500V 6A 760mOhms Product overview: FDD6N50TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 6A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD6N50TM can be used for catalog matching and distributor lookup.

MOSFETs 500V 6A 760mOhms Product overview: FDD6N50TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 6A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD6N50TM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 500V, 6A, To-252; Channel Type Onsemi - 86K1341 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 6A, To-252; Channel Type Onsemi
86K1341
Mosfet, N-Ch, 500V, 6A, To-252; Channel Type Onsemi 86K1341
MOSFET, N-CH, 500V, 6A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Qualification:-RoHS Compliant: Yes

MOSFET, N-CH, 500V, 6A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Qualification:-RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V 6A 760mOhms

MOSFET 500V 6A 760mOhms

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6N50TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD6N50TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD6N50TM
MOSFET N-CH 500V 6A DPAK

MOSFET N-CH 500V 6A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 066938-FDD6N50TM FDD6N50TMTR-ND 2088-FDD6N50TM 86K1341 FDD6N50TM FDD6N50TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N50TM Single FETs, MOSFETs 500V 6A MOSFET Transistor Mosfet, N-Ch, 500V, 6A, To-252; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 500 volts
PD 89000 milliwatts 89 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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