onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N50FTM FDD6N50FTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015956-FDD6N50FTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 19.8nC @ 10V Max Input Capacitance: 960pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.15 Ohm @ 2.75A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N50FTM - 015956-FDD6N50FTM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDD6N50FTM - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDD6N50FTMTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDD6N50FTMCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6N50FTM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 500V, 5.5A, 150Deg C, 89W Rohs Compliant Onsemi - 54AH8626 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015956-FDD6N50FTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 19.8nC @ 10V Max Input Capacitance: 960pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.15 Ohm @ 2.75A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N50FTM - 015956-FDD6N50FTM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N50FTM
015956-FDD6N50FTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N50FTM 015956-FDD6N50FTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015956-FDD6N50FTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 19.8nC @ 10V Max Input Capacitance: 960pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.15 Ohm @ 2.75A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015956-FDD6N50FTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 19.8nC @ 10V
Max Input Capacitance: 960pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.15 Ohm @ 2.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDD6N50FTM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDD6N50FTM
Single FETs, MOSFETs FDD6N50FTM
MOSFET N-CH 500V 5.5A DPAK

MOSFET N-CH 500V 5.5A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - FDD6N50FTMTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD6N50FTMTR-ND
Single FETs, MOSFETs FDD6N50FTMTR-ND
N-Channel 500V 5.5A (Tc) 89W (Tc) Surface Mount TO-252AA

N-Channel 500V 5.5A (Tc) 89W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD6N50FTMCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD6N50FTMCT-ND
Single FETs, MOSFETs FDD6N50FTMCT-ND
N-Channel 500V 5.5A (Tc) 89W (Tc) Surface Mount TO-252AA

N-Channel 500V 5.5A (Tc) 89W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDD6N50FTM
MOSFET FDD6N50FTM
MOSFET 500V N-Channel

MOSFET 500V N-Channel

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6N50FTM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD6N50FTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD6N50FTM
MOSFET N-CH 500V 5.5A DPAK

MOSFET N-CH 500V 5.5A DPAK

Supplier's Site
Mosfet, N-Ch, 500V, 5.5A, 150Deg C, 89W Rohs Compliant Onsemi - 54AH8626 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 5.5A, 150Deg C, 89W Rohs Compliant Onsemi
54AH8626
Mosfet, N-Ch, 500V, 5.5A, 150Deg C, 89W Rohs Compliant Onsemi 54AH8626
MOSFET, N-CH, 500V, 5.5A, 150DEG C, 89W ROHS COMPLIANT: YES

MOSFET, N-CH, 500V, 5.5A, 150DEG C, 89W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 015956-FDD6N50FTM FDD6N50FTM FDD6N50FTMTR-ND FDD6N50FTM FDD6N50FTM 54AH8626
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N50FTM Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 500V, 5.5A, 150Deg C, 89W Rohs Compliant Onsemi
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 89000 milliwatts 89000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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