onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N25TM FDD6N25TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015955-FDD6N25TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 4.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.1 Ohm @ 2.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N25TM - 015955-FDD6N25TM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDD6N25TMTR-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 250V, 4.4A, To-252Aa-3; Channel Type Onsemi - 31Y1358 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6N25TM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015955-FDD6N25TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 4.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.1 Ohm @ 2.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N25TM - 015955-FDD6N25TM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N25TM
015955-FDD6N25TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N25TM 015955-FDD6N25TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015955-FDD6N25TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 4.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.1 Ohm @ 2.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015955-FDD6N25TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 4.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 6nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.1 Ohm @ 2.2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDD6N25TMTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD6N25TMTR-ND
Single FETs, MOSFETs FDD6N25TMTR-ND
N-Channel 250V 4.4A (Tc) 50W (Tc) Surface Mount TO-252AA

N-Channel 250V 4.4A (Tc) 50W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 250V 4.4A 1.1 Ohm MOSFET Transistor
278-FDD6N25TM
N-Channel 250V 4.4A 1.1 Ohm MOSFET Transistor 278-FDD6N25TM
N-Channel MOSFET, 250V, 4.4A, 1.1 Ohm, DPAK, SM Product overview: FDD6N25TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 250V, 4.4A, 1.1 Ohm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 4.4A, 1.1 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD6N25TM can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 250V, 4.4A, 1.1 Ohm, DPAK, SM Product overview: FDD6N25TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 250V, 4.4A, 1.1 Ohm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 4.4A, 1.1 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD6N25TM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDD6N25TM
MOSFET FDD6N25TM
MOSFET 250V N-CH MOSFET

MOSFET 250V N-CH MOSFET

Buy Now Datasheet
Mosfet, N-Ch, 250V, 4.4A, To-252Aa-3; Channel Type Onsemi - 31Y1358 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 250V, 4.4A, To-252Aa-3; Channel Type Onsemi
31Y1358
Mosfet, N-Ch, 250V, 4.4A, To-252Aa-3; Channel Type Onsemi 31Y1358
MOSFET, N-CH, 250V, 4.4A, TO-252AA-3; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:4.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 250V, 4.4A, TO-252AA-3; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:4.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6N25TM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD6N25TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD6N25TM
MOSFET N-CH 250V 4.4A DPAK

MOSFET N-CH 250V 4.4A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 015955-FDD6N25TM FDD6N25TMTR-ND 278-FDD6N25TM FDD6N25TM 31Y1358 FDD6N25TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N25TM Single FETs, MOSFETs N-Channel 250V 4.4A 1.1 Ohm MOSFET Transistor MOSFET Mosfet, N-Ch, 250V, 4.4A, To-252Aa-3; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 250 volts
PD 50000 milliwatts 50000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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