onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N20TM FDD6N20TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015954-FDD6N20TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.1nC @ 10V Max Input Capacitance: 230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.3A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015954-FDD6N20TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.1nC @ 10V Max Input Capacitance: 230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.3A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N20TM - 015954-FDD6N20TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N20TM
015954-FDD6N20TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N20TM 015954-FDD6N20TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015954-FDD6N20TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.1nC @ 10V Max Input Capacitance: 230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.3A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015954-FDD6N20TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 6.1nC @ 10V
Max Input Capacitance: 230pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 800 mOhm @ 2.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDD6N20TMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD6N20TMTR-ND
Single FETs, MOSFETs FDD6N20TMTR-ND
N-Channel 200V 4.5A (Tc) 40W (Tc) Surface Mount TO-252AA

N-Channel 200V 4.5A (Tc) 40W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6N20TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD6N20TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD6N20TM
MOSFET N-CH 200V 4.5A DPAK

MOSFET N-CH 200V 4.5A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 200V N Chanel MOSFET

MOSFET 200V N Chanel MOSFET

Buy Now Datasheet
Mosfet, N Channel, 200V, 0.6Ohm, 4.5A, To-252-3; Channel Type Onsemi - 84W8853 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 200V, 0.6Ohm, 4.5A, To-252-3; Channel Type Onsemi
84W8853
Mosfet, N Channel, 200V, 0.6Ohm, 4.5A, To-252-3; Channel Type Onsemi 84W8853
MOSFET, N CHANNEL, 200V, 0.6OHM, 4.5A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:40W RoHS Compliant: Yes

MOSFET, N CHANNEL, 200V, 0.6OHM, 4.5A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:40W RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 015954-FDD6N20TM FDD6N20TMTR-ND FDD6N20TM FDD6N20TM 84W8853
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N20TM Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N Channel, 200V, 0.6Ohm, 4.5A, To-252-3; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 200 volts
PD 40000 milliwatts 40000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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