N-Channel MOSFET, 200V, 4.5A, 800mR, DPAK, Surface Mount Product overview: FDD6N20TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 200V, 4.5A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 200V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD6N20TM can be used for catalog matching and distributor lookup.
N-Channel 200V 4.5A (Tc) 40W (Tc) Surface Mount TO-252AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015954-FDD6N20TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 6.1nC @ 10V
Max Input Capacitance: 230pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 800 mOhm @ 2.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
MOSFET N-CH 200V 4.5A DPAK
MOSFET, N CHANNEL, 200V, 0.6OHM, 4.5A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:40W RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FDD6N20TM | FDD6N20TMTR-ND | 015954-FDD6N20TM | FDD6N20TM | 84W8853 | FDD6N20TM |
| Product Name | N-Channel SMD 200V 4.5A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6N20TM | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 200V, 0.6Ohm, 4.5A, To-252-3; Channel Type Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 40000 milliwatts | 40000 milliwatts | 40000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); D-Pak | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 |
