N-Channel 30V 12A (Ta), 46A (Tc) 3.3W (Ta), 56W (Tc) Surface Mount TO-252AA
N-Channel 30V 12A (Ta), 46A (Tc) 3.3W (Ta), 56W (Tc) Surface Mount TO-252AA
N-Channel 30V 12A (Ta), 46A (Tc) 3.3W (Ta), 56W (Tc) Surface Mount TO-252AA
MOSFETs 30V N-Ch PowerTrench Product overview: FDD6690A from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD6690A can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066937-FDD6690A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.3W (Ta), 56W (Tc)
Family Name: FDD6690A
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta), 46A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 18nC @ 5V
Max Input Capacitance: 1230pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): SUD50N03-12P-E3; SUD50N03-12P; MDD1502RH; DMN3010LK3-13;
Introduction Date: April 09, 1999
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management
Quantity per package: 2,500
POWER FIELD-EFFECT TRANSISTOR, 1
MOSFET N-CH 30V 12A/46A DPAK
MOSFET N-CH 30V 12A/46A DPAK
MOSFET Transistor, N Channel, 46 A, 30 V, 0.0077 ohm, 10 V, 1.9 V RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDD6690ACT-ND | 2088-FDD6690A | 066937-FDD6690A | FDD6690A | FDD6690A | 25M9451 | FDD6690A |
| Product Name | Single FETs, MOSFETs | 30V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6690A | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 46 A, 30 V, 0.0077 Ohm, 10 V, 1.9 V Rohs Compliant Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Reel | SOT3; TO-252 (DPAK); D-PAK (TO-252AA) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | |
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0470 kS | ||||||
| PD | 3.3 milliwatts | 3300 to 56000 milliwatts | 3300 milliwatts |
