onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6630A FDD6630A

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015947-FDD6630A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 28W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 21A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 7nC @ 5V Max Input Capacitance: 462pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 7.6A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015947-FDD6630A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 28W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 21A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 7nC @ 5V Max Input Capacitance: 462pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 7.6A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6630A - 015947-FDD6630A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6630A
015947-FDD6630A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6630A 015947-FDD6630A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015947-FDD6630A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 28W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 21A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 7nC @ 5V Max Input Capacitance: 462pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 7.6A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015947-FDD6630A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 28W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 21A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7nC @ 5V
Max Input Capacitance: 462pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 35 mOhm @ 7.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDD6630A - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDD6630A
Single FETs, MOSFETs FDD6630A
POWER FIELD-EFFECT TRANSISTOR, 2

POWER FIELD-EFFECT TRANSISTOR, 2

Supplier's Site Datasheet
Single FETs, MOSFETs - FDD6630A - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDD6630A
Single FETs, MOSFETs FDD6630A
MOSFET N-CH 30V 21A TO252

MOSFET N-CH 30V 21A TO252

Supplier's Site Datasheet
Singapore
30V 21A TO-252 MOSFET Transistor
278-FDD6630A
30V 21A TO-252 MOSFET Transistor 278-FDD6630A
30V N-CH MOSFET, 21A, 35mΩ, TO-252, SM Product overview: FDD6630A from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 21A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 21A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD6630A can be used for catalog matching and distributor lookup.

30V N-CH MOSFET, 21A, 35mΩ, TO-252, SM Product overview: FDD6630A from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 21A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 21A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD6630A can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDD6630ATR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD6630ATR-ND
Single FETs, MOSFETs FDD6630ATR-ND
N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-252AA

N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD6630ACT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD6630ACT-ND
Single FETs, MOSFETs FDD6630ACT-ND
N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-252AA

N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD6630ADKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD6630ADKR-ND
Single FETs, MOSFETs FDD6630ADKR-ND
N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-252AA

N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-252AA

Buy Now Datasheet
N Channel Mosfet, 30V, 21A, To-252; Channel Type Onsemi - 67P3465 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 21A, To-252; Channel Type Onsemi
67P3465
N Channel Mosfet, 30V, 21A, To-252; Channel Type Onsemi 67P3465
N CHANNEL MOSFET, 30V, 21A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:21A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 21A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:21A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes

Supplier's Site Datasheet
N Channel Mosfet, 30V, 21A, To-252; Channel Type Onsemi - 34C0124 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 21A, To-252; Channel Type Onsemi
34C0124
N Channel Mosfet, 30V, 21A, To-252; Channel Type Onsemi 34C0124
N CHANNEL MOSFET, 30V, 21A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:21A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 21A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:21A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6630A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD6630A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD6630A
MOSFET N-CH 30V 21A TO252

MOSFET N-CH 30V 21A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 015947-FDD6630A FDD6630A 278-FDD6630A FDD6630ATR-ND 67P3465 FDD6630A
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6630A Single FETs, MOSFETs 30V 21A TO-252 MOSFET Transistor Single FETs, MOSFETs N Channel Mosfet, 30V, 21A, To-252; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 28000 milliwatts 28000 milliwatts 28000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 C (-67 F)
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