Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015947-FDD6630A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 28W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 21A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7nC @ 5V
Max Input Capacitance: 462pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 35 mOhm @ 7.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
POWER FIELD-EFFECT TRANSISTOR, 2
MOSFET N-CH 30V 21A TO252
30V N-CH MOSFET, 21A, 35mΩ, TO-252, SM Product overview: FDD6630A from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 21A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 21A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD6630A can be used for catalog matching and distributor lookup.
N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-252AA
N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-252AA
N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-252AA
N CHANNEL MOSFET, 30V, 21A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:21A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 21A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:21A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes
MOSFET N-CH 30V 21A TO252
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 015947-FDD6630A | FDD6630A | 278-FDD6630A | FDD6630ATR-ND | 67P3465 | FDD6630A |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6630A | Single FETs, MOSFETs | 30V 21A TO-252 MOSFET Transistor | Single FETs, MOSFETs | N Channel Mosfet, 30V, 21A, To-252; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 28000 milliwatts | 28000 milliwatts | 28000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |