Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015946-FDD6612A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.5A (Ta), 30A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9.4nC @ 5V
Max Input Capacitance: 660pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 9.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 9.5A/30A DPAK
N-Channel 30V 9.5A (Ta), 30A (Tc) 2.8W (Ta), 36W (Tc) Surface Mount TO-252AA
N CHANNEL MOSFET, 30V, 30A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET N-CH 30V 9.5A/30A DPAK
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 015946-FDD6612A | FDD6612A | FDD6612ATR-ND | 34C0123 | FDD6612A | FDD6612A |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6612A | Single FETs, MOSFETs | Single FETs, MOSFETs | N Channel Mosfet, 30V, 30A, To-252; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 2800 to 36000 milliwatts | 2800 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
