onsemi Single FETs, MOSFETs FDD6612A

Description
N-Channel 30V 9.5A (Ta), 30A (Tc) 2.8W (Ta), 36W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet
Description
N-Channel 30V 9.5A (Ta), 30A (Tc) 2.8W (Ta), 36W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDD6612ATR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD6612ATR-ND
Single FETs, MOSFETs FDD6612ATR-ND
N-Channel 30V 9.5A (Ta), 30A (Tc) 2.8W (Ta), 36W (Tc) Surface Mount TO-252AA

N-Channel 30V 9.5A (Ta), 30A (Tc) 2.8W (Ta), 36W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6612A - 015946-FDD6612A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6612A
015946-FDD6612A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6612A 015946-FDD6612A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015946-FDD6612A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 36W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.5A (Ta), 30A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9.4nC @ 5V Max Input Capacitance: 660pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 9.5A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015946-FDD6612A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.5A (Ta), 30A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9.4nC @ 5V
Max Input Capacitance: 660pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 9.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - FDD6612A - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDD6612A
Single FETs, MOSFETs FDD6612A
MOSFET N-CH 30V 9.5A/30A DPAK

MOSFET N-CH 30V 9.5A/30A DPAK

Supplier's Site Datasheet
N Channel Mosfet, 30V, 30A, To-252; Channel Type Onsemi - 34C0123 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 30A, To-252; Channel Type Onsemi
34C0123
N Channel Mosfet, 30V, 30A, To-252; Channel Type Onsemi 34C0123
N CHANNEL MOSFET, 30V, 30A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 30A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6612A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD6612A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD6612A
MOSFET N-CH 30V 9.5A/30A DPAK

MOSFET N-CH 30V 9.5A/30A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDD6612A
MOSFET FDD6612A
MOSFET 30V N-Ch PowerTrench

MOSFET 30V N-Ch PowerTrench

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDD6612ATR-ND 015946-FDD6612A FDD6612A 34C0123 FDD6612A FDD6612A
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6612A Single FETs, MOSFETs N Channel Mosfet, 30V, 30A, To-252; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-PAK (TO-252AA) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 30 volts 30 volts
PD 2800 to 36000 milliwatts 2800 milliwatts
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