onsemi Single FETs, MOSFETs FDD6530A

Description
MOSFET N-CH 20V 21A TO252
  • Single FETs, MOSFETs - FDD6530A - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6530A - 015945-FDD6530A - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDD6530ATR-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 21A, 20V, To-252; Transistor Polarity Onsemi - 07AH3898 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6530A - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 20V 21A TO252
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDD6530A - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDD6530A
Single FETs, MOSFETs FDD6530A
MOSFET N-CH 20V 21A TO252

MOSFET N-CH 20V 21A TO252

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6530A - 015945-FDD6530A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6530A
015945-FDD6530A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6530A 015945-FDD6530A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015945-FDD6530A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.3W (Ta), 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 21A (Ta) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 9nC @ 4.5V Max Input Capacitance: 710pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 32 mOhm @ 8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015945-FDD6530A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.3W (Ta), 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 21A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 9nC @ 4.5V
Max Input Capacitance: 710pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 32 mOhm @ 8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDD6530ATR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD6530ATR-ND
Single FETs, MOSFETs FDD6530ATR-ND
N-Channel 20V 21A (Ta) 3.3W (Ta), 33W (Tc) Surface Mount TO-252AA

N-Channel 20V 21A (Ta) 3.3W (Ta), 33W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Mosfet, N-Ch, 21A, 20V, To-252; Transistor Polarity Onsemi - 07AH3898 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 21A, 20V, To-252; Transistor Polarity Onsemi
07AH3898
Mosfet, N-Ch, 21A, 20V, To-252; Transistor Polarity Onsemi 07AH3898
MOSFET, N-CH, 21A, 20V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900mV; Power RoHS Compliant: Yes

MOSFET, N-CH, 21A, 20V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900mV; Power RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6530A - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD6530A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD6530A
MOSFET N-CH 20V 21A TO252

MOSFET N-CH 20V 21A TO252

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDD6530A
MOSFET FDD6530A
MOSFET 20V N-Ch PowerTrench

MOSFET 20V N-Ch PowerTrench

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDD6530A 015945-FDD6530A FDD6530ATR-ND 07AH3898 FDD6530A FDD6530A
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6530A Single FETs, MOSFETs Mosfet, N-Ch, 21A, 20V, To-252; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 21000 milliamps 21000 milliamps
PD 3300 milliwatts 3300 to 33000 milliwatts
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