MOSFET N-CH 20V 21A TO252
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015945-FDD6530A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.3W (Ta), 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 21A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 9nC @ 4.5V
Max Input Capacitance: 710pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 32 mOhm @ 8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
N-Channel 20V 21A (Ta) 3.3W (Ta), 33W (Tc) Surface Mount TO-252AA
MOSFET N-CH 20V 21A TO252
MOSFET, N-CH, 21A, 20V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900mV; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDD6530A | 015945-FDD6530A | FDD6530ATR-ND | FDD6530A | FDD6530A | 07AH3898 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6530A | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 21A, 20V, To-252; Transistor Polarity Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | 20 volts | ||||
| IDSS | 21000 milliamps | 21000 milliamps | ||||
| PD | 3300 milliwatts | 3300 to 33000 milliwatts |
