onsemi Single FETs, MOSFETs FDD6030L

Description
POWER FIELD-EFFECT TRANSISTOR, 5
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Description
POWER FIELD-EFFECT TRANSISTOR, 5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDD6030L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDD6030L
Single FETs, MOSFETs FDD6030L
POWER FIELD-EFFECT TRANSISTOR, 5

POWER FIELD-EFFECT TRANSISTOR, 5

Supplier's Site Datasheet
Single FETs, MOSFETs - FDD6030L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDD6030L
Single FETs, MOSFETs FDD6030L
MOSFET N-CH 30V 12A/50A DPAK

MOSFET N-CH 30V 12A/50A DPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6030L - 015943-FDD6030L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6030L
015943-FDD6030L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6030L 015943-FDD6030L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015943-FDD6030L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.2W (Ta), 56W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 28nC @ 5V Max Input Capacitance: 1230pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14.5 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015943-FDD6030L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta), 56W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 28nC @ 5V
Max Input Capacitance: 1230pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14.5 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDD6030LTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD6030LTR-ND
Single FETs, MOSFETs FDD6030LTR-ND
N-Channel 30V 12A (Ta), 50A (Tc) 3.2W (Ta), 56W (Tc) Surface Mount TO-252AA

N-Channel 30V 12A (Ta), 50A (Tc) 3.2W (Ta), 56W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
MOSFET Transistor 278-FDD6030L
POWER FIELD-EFFECT TRANSISTOR, 5 Product overview: FDD6030L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD6030L can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR, 5 Product overview: FDD6030L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD6030L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6030L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD6030L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD6030L
MOSFET N-CH 30V 12A/50A DPAK

MOSFET N-CH 30V 12A/50A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDD6030L
MOSFET FDD6030L
MOSFET 30V N-Channel Power Trench

MOSFET 30V N-Channel Power Trench

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Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDD6030L 015943-FDD6030L FDD6030LTR-ND 278-FDD6030L FDD6030L FDD6030L
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6030L Single FETs, MOSFETs MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 12000 milliamps
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