N-Channel 600V 4A (Tc) 83W (Tc) Surface Mount TO-252AA
N-Channel 600V 4A (Tc) 83W (Tc) Surface Mount TO-252AA
N-Channel 600V 4A (Tc) 83W (Tc) Surface Mount TO-252AA
MOSFETs N-Channel 600V 4A Product overview: FDD5N60NZTM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD5N60NZTM can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 120344-FDD5N60NZTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Family Name: FDD5N60NZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 600pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 2 Ohm @ 2A, 10V
Alternative Parts (Cross-Reference): STD3NC60; AOD2HC60; STDLED624;
Introduction Date: June 04, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500
MOSFET N-CH 600V 4A DPAK
MOSFET, N-CH, 600V, 4A, 83W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.65ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 4A DPAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDD5N60NZTMTR-ND | 2088-FDD5N60NZTM | 120344-FDD5N60NZTM | FDD5N60NZTM | 99AC9159 | FDD5N60NZTM | FDD5N60NZTM |
| Product Name | Single FETs, MOSFETs | N-Channel 600V 4A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD5N60NZTM | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 4A, 83W, To-252; Transistor Polarity Onsemi | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Reel | SOT3; TO-252 (DPAK); D-Pak | Surface Mount | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| MOSFET Operating Mode | Enhancement | ||||||
| PD | 83 milliwatts | 83000 milliwatts | 83000 milliwatts | ||||
| Packing Method | Reel | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
