onsemi FETs - Single - FDD5810 FDD5810

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1173761-FDD5810 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Family Name: FDD5810 Categories: Discrete Semiconductor Products Supplier Device Package: D-PAK (TO-252) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 72W Alternative Parts (Cross-Reference): STD30NE06T4; STD20NE06; STD30NE06; STD20NE06T4; Introduction Date: April 20, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 7.4A, 37A Rds On (Maximum) at Id, Vgs: 22mOhm at 32A, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 34nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1890pF at 25V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1173761-FDD5810 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Family Name: FDD5810 Categories: Discrete Semiconductor Products Supplier Device Package: D-PAK (TO-252) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 72W Alternative Parts (Cross-Reference): STD30NE06T4; STD20NE06; STD30NE06; STD20NE06T4; Introduction Date: April 20, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 7.4A, 37A Rds On (Maximum) at Id, Vgs: 22mOhm at 32A, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 34nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1890pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FDD5810 - 1173761-FDD5810 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FDD5810
1173761-FDD5810
FETs - Single - FDD5810 1173761-FDD5810
Manufacturer: ON Semiconductor Win Source Part Number: 1173761-FDD5810 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Family Name: FDD5810 Categories: Discrete Semiconductor Products Supplier Device Package: D-PAK (TO-252) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 72W Alternative Parts (Cross-Reference): STD30NE06T4; STD20NE06; STD30NE06; STD20NE06T4; Introduction Date: April 20, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 7.4A, 37A Rds On (Maximum) at Id, Vgs: 22mOhm at 32A, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 34nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1890pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 1173761-FDD5810
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: FDD5810
Categories: Discrete Semiconductor Products
Supplier Device Package: D-PAK (TO-252)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 72W
Alternative Parts (Cross-Reference): STD30NE06T4; STD20NE06; STD30NE06; STD20NE06T4;
Introduction Date: April 20, 2001
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 7.4A, 37A
Rds On (Maximum) at Id, Vgs: 22mOhm at 32A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 34nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1890pF at 25V

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Singapore
60V 37A DPAK MOSFET Transistor
278-FDD5810
60V 37A DPAK MOSFET Transistor 278-FDD5810
MOSFET N-CH 60V 37A DPAK Product overview: FDD5810 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 37A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 37A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD5810 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 37A DPAK Product overview: FDD5810 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 37A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 37A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD5810 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD5810 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD5810
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD5810
MOSFET N-CH 60V 7.4A/37A DPAK

MOSFET N-CH 60V 7.4A/37A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1173761-FDD5810 278-FDD5810 FDD5810
Product Name FETs - Single - FDD5810 60V 37A DPAK MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts
PD 72000 milliwatts 72000 milliwatts
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