N-Channel 60V 8.5A (Ta) 2.8W (Ta), 60W (Tc) Surface Mount TO-252AA
N-Channel 60V 8.5A (Ta) 2.8W (Ta), 60W (Tc) Surface Mount TO-252AA
N-Channel 60V 8.5A (Ta) 2.8W (Ta), 60W (Tc) Surface Mount TO-252AA
MOSFETs N-Ch PowerTrench Product overview: FDD5680 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD5680 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015942-FDD5680
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Family Name: FDD5680
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8.5A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 1835pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 21 mOhm @ 8.5A, 10V
Alternative Parts (Cross-Reference): DMNH6021SK3-13; SQD40N06-25L-GE3; SUD50N06-16; SUD50N06-16-E3;
Introduction Date: July 24, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFET, 60V, 8.5A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V; No. of Pins:3PinsRoHS Compliant: Yes
MOSFET N-CH 60V 8.5A TO252
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDD5680TR-ND | 2088-FDD5680 | 015942-FDD5680 | 58K1436 | FDD5680 | FDD5680 |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD5680 | Mosfet, 60V, 8.5A, To-252; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Reel | SOT3; TO-252 (DPAK); TO-252 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 0.0300 kS | |||||
| PD | 60 milliwatts | 2800 to 60000 milliwatts |
