MOSFET P-CH 40V 8.4A/32A DPAK
P-Channel 40V 8.4A (Ta), 32A (Tc) 69W (Tc) Surface Mount TO-252AA
P-Channel 40V 8.4A (Ta), 32A (Tc) 69W (Tc) Surface Mount TO-252AA
P-Channel 40V 8.4A (Ta), 32A (Tc) 69W (Tc) Surface Mount TO-252AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038070-FDD4685
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 8.4A (Ta), 32A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 27nC @ 5V
Max Input Capacitance: 2380pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 8.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFET P-CH 40V 8.4A/32A DPAK
P CHANNEL MOSFET, -40V, 8.4mA; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8.4mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
P CHANNEL MOSFET, -40V, 8.4mA, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8.4mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
MOSFET Transistor, P Channel, 32 A, 40 V, 0.023 ohm, -10 V, -1.6 V RoHS Compliant: Yes
MOSFET -40V P-Channel PowerTrench MOSFET
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDD4685 | FDD4685TR-ND | 1038070-FDD4685 | 8090893 | 8090893P | FDD4685 | 15R3424 | 61M6222 | FDD4685 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD4685 | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -40V, 8.4Ma; Channel Type Onsemi | Mosfet Transistor, P Channel, 32 A, 40 V, 0.023 Ohm, -10 V, -1.6 V Rohs Compliant Onsemi | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | 40 volts | |||||
| IDSS | 8400 milliamps | 8400 milliamps | 8400 milliamps | 8.4 milliamps | |||||
| PD | 69000 milliwatts | 69000 milliwatts |
