POWER FIELD-EFFECT TRANSISTOR, 6
MOSFET N-CH 100V 6.2A DPAK
MOSFETs 100V N-Channel Power Trench Product overview: FDD3860 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD3860 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015938-FDD3860
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 6.2A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 1740pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 36 mOhm @ 5.9A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
N-Channel 100V 6.2A (Ta) 3.1W (Ta), 69W (Tc) Surface Mount TO-252AA
N-Channel 100V 6.2A (Ta) 3.1W (Ta), 69W (Tc) Surface Mount TO-252AA
N-Channel 100V 6.2A (Ta) 3.1W (Ta), 69W (Tc) Surface Mount TO-252AA
MOSFET N-CH 100V 6.2A DPAK
MOSFET 100V N-Channel Power Trench
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDD3860 | 2088-FDD3860 | 015938-FDD3860 | FDD3860CT-ND | FDD3860 | FDD3860 |
| Product Name | Single FETs, MOSFETs | N-Channel 100V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD3860 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 100 volts | 100 volts | ||||
| IDSS | 6200 milliamps | |||||
| PD | 3100 milliwatts | 3.1 milliwatts | 3100 to 69000 milliwatts |