onsemi Single FETs, MOSFETs FDD3860

Description
POWER FIELD-EFFECT TRANSISTOR, 6
Request a Quote Datasheet
Description
POWER FIELD-EFFECT TRANSISTOR, 6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDD3860 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDD3860
Single FETs, MOSFETs FDD3860
POWER FIELD-EFFECT TRANSISTOR, 6

POWER FIELD-EFFECT TRANSISTOR, 6

Supplier's Site Datasheet
Single FETs, MOSFETs - FDD3860 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDD3860
Single FETs, MOSFETs FDD3860
MOSFET N-CH 100V 6.2A DPAK

MOSFET N-CH 100V 6.2A DPAK

Supplier's Site Datasheet
Singapore
N-Channel 100V MOSFET Transistor
2088-FDD3860
N-Channel 100V MOSFET Transistor 2088-FDD3860
MOSFETs 100V N-Channel Power Trench Product overview: FDD3860 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD3860 can be used for catalog matching and distributor lookup.

MOSFETs 100V N-Channel Power Trench Product overview: FDD3860 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD3860 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD3860 - 015938-FDD3860 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD3860
015938-FDD3860
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD3860 015938-FDD3860
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015938-FDD3860 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 69W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 6.2A (Ta) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 1740pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 36 mOhm @ 5.9A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015938-FDD3860
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 6.2A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 1740pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 36 mOhm @ 5.9A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDD3860CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD3860CT-ND
Single FETs, MOSFETs FDD3860CT-ND
N-Channel 100V 6.2A (Ta) 3.1W (Ta), 69W (Tc) Surface Mount TO-252AA

N-Channel 100V 6.2A (Ta) 3.1W (Ta), 69W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD3860DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD3860DKR-ND
Single FETs, MOSFETs FDD3860DKR-ND
N-Channel 100V 6.2A (Ta) 3.1W (Ta), 69W (Tc) Surface Mount TO-252AA

N-Channel 100V 6.2A (Ta) 3.1W (Ta), 69W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD3860TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD3860TR-ND
Single FETs, MOSFETs FDD3860TR-ND
N-Channel 100V 6.2A (Ta) 3.1W (Ta), 69W (Tc) Surface Mount TO-252AA

N-Channel 100V 6.2A (Ta) 3.1W (Ta), 69W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD3860 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD3860
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD3860
MOSFET N-CH 100V 6.2A DPAK

MOSFET N-CH 100V 6.2A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDD3860
MOSFET FDD3860
MOSFET 100V N-Channel Power Trench

MOSFET 100V N-Channel Power Trench

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDD3860 2088-FDD3860 015938-FDD3860 FDD3860CT-ND FDD3860 FDD3860
Product Name Single FETs, MOSFETs N-Channel 100V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD3860 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts
IDSS 6200 milliamps
PD 3100 milliwatts 3.1 milliwatts 3100 to 69000 milliwatts
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