Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015938-FDD3860
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 6.2A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 1740pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 36 mOhm @ 5.9A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
POWER FIELD-EFFECT TRANSISTOR, 6
MOSFET N-CH 100V 6.2A DPAK
N-Channel 100V 6.2A (Ta) 3.1W (Ta), 69W (Tc) Surface Mount TO-252AA
N-Channel 100V 6.2A (Ta) 3.1W (Ta), 69W (Tc) Surface Mount TO-252AA
N-Channel 100V 6.2A (Ta) 3.1W (Ta), 69W (Tc) Surface Mount TO-252AA
MOSFET 100V N-Channel Power Trench
MOSFET N-CH 100V 6.2A DPAK
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 015938-FDD3860 | FDD3860 | FDD3860CT-ND | FDD3860 | FDD3860 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD3860 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 100 volts | 100 volts | |||
| PD | 3100 to 69000 milliwatts | 3100 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
