MOSFET N-CH 20V 14.7A/50A DPAK
POWER FIELD-EFFECT TRANSISTOR, 1
POWER FIELD-EFFECT TRANSISTOR, 1 Product overview: FDD3706 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD3706 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066923-FDD3706
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 14.7A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 23nC @ 4.5V
Max Input Capacitance: 1882pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 9 mOhm @ 16.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
N-Channel 20V 14.7A (Ta), 50A (Tc) 3.8W (Ta), 44W (Tc) Surface Mount TO-252AA
MOSFET N-CH 20V 14.7A/50A DPAK
MOSFET, N CH, 20V, 50A, TO-252AA-3; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDD3706 | 278-FDD3706 | 066923-FDD3706 | FDD3706FSTR-ND | FDD3706 | FDD3706 | 31Y1355 |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD3706 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Ch, 20V, 50A, To-252Aa-3; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 14700 milliamps | 50000 milliamps |
