N-Channel 100V 6.5A (Ta), 44A (Tc) 135W (Tc) Surface Mount TO-252AA
N-Channel 100V 6.5A (Ta), 44A (Tc) 135W (Tc) Surface Mount TO-252AA
N-Channel 100V 6.5A (Ta), 44A (Tc) 135W (Tc) Surface Mount TO-252AA
POWER FIELD-EFFECT TRANSISTOR, 6
MOSFETs 100V 44a .28 Ohms/VGS=1V Product overview: FDD3672 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 44a, 1V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 44a, 1V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD3672 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066922-FDD3672
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 144W (Tc)
Family Name: FDD3672
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 44A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1635pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 47 mOhm @ 21A, 6V
Alternative Parts (Cross-Reference): AOD2910E; AUIRFR540ZTRR; IPD30N10S3L-34; IRFR540ZTRRPBF;
Introduction Date: June 13, 2002
ECCN: EAR99
Country of Origin: China, Philippines, Republic of Korea, United States of America
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
N CH MOSFET, 100V, 44A, TO-252AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:44A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 44A, TO-252AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:44A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 44A, TO-252AB; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:44A; DRAIN SOURCE VOLTAGE VDS:100V; ON RESISTANCE RDS(ON):0.024OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 6.5/44A TO252AA
MOSFET N-CH 100V 44A D-PAK
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDD3672TR-ND | FDD3672 | 2088-FDD3672 | 066922-FDD3672 | FDD3672 | 67R2045 | 58K1434 | 16119962 | FDD3672 | 598-FDD3672 |
| Product Name | Single FETs, MOSFETs | Specialized ICs | 100V 44a 1V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD3672 | MOSFET | N Ch Mosfet, 100V, 44A, To-252Ab; Channel Type Onsemi | N Channel Mosfet, 100V, 44A, To-252Ab; Channel Type Onsemi | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 100V 44A D-PAK |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | Reel | SOT3; TO-252 (DPAK); TO-252AA | TO-3 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||||
| IDSS | 6500 milliamps | 44000 milliamps | 44000 milliamps |
