onsemi FET, MOSFET Arrays FDD3510H

Mosfet Array N and P-Channel, Common Drain 80V 4.3A, 2.8A 1.3W Surface Mount TO-252 (DPAK)

Dual N/P-Ch MOSFET, 80V, 2.8A, 80mR, TO-252-5, SMT Product overview: FDD3510H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 80V, 2.8A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 80V, 2.8A, TO-252, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDD3510H can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038059-FDD3510H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Family Name: FDD3510
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-4L
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 4.3A, 2.8A
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 800pF @ 40V
Maximum Rds On at Id,Vgs: 80 mOhm @ 4.3A, 10V
Introduction Date: July 28, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

MOSFET N/P-CH 80V 4.3/2.8A TO252