Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038058-FDD306P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 52W (Ta)
Family Name: FDD306P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 6.7A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 21nC @ 4.5V
Max Input Capacitance: 1290pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 28 mOhm @ 6.7A, 4.5V
Alternative Parts (Cross-Reference): RAF040P01TL; RAF040P01TCL; DMP1045UFY4-7;
Introduction Date: January 06, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFETs SPECIFIED POWER TR 1.8V PCH Product overview: FDD306P from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.8V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD306P can be used for catalog matching and distributor lookup.
MOSFET P-Channel 12V 6.7A TO252AA
P-Channel 12V 6.7A (Ta) 52W (Ta) Surface Mount TO-252AA
P-Channel 12V 6.7A (Ta) 52W (Ta) Surface Mount TO-252AA
P-Channel 12V 6.7A (Ta) 52W (Ta) Surface Mount TO-252AA
MOSFET P-CH 12V 6.7A TO252
MOSFET, P, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:6.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:500mV; Power Dissipation:52W RoHS Compliant: Yes
MOSFET SPECIFIED POWER TR 1.8V PCH
MOSFET P-CH 12V 6.7A TO252
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1038058-FDD306P | 2088-FDD306P | 7599065P | 7599065 | FDD306PCT-ND | FDD306P | 96K9867 | FDD306P | FDD306P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD306P | 1.8V MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P, To-252; Channel Type Onsemi | MOSFET | Single FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| V(BR)DSS | 12 volts | 12 volts | |||||||
| PD | 52000 milliwatts | 52 milliwatts | 52000 milliwatts | 52000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||||
| Package Type | SOT3; TO-252 (DPAK); TO-252 | Reel | TO-252 (DPAK); TO-252 | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Surface Mount | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
