onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD26AN06A0_F085 FDD26AN06A0_F085

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038057-FDD26AN06A0_F085
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 7A (Ta), 36A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 36A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 60V 7A DPAK-3 Product overview: FDD26AN06A0_F085 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 7A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 7A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FDD26AN06A0_F085 can be used for catalog matching and distributor lookup.