onsemi Single FETs, MOSFETs FDD2612

Description
N-Channel 200V 4.9A (Ta) 42W (Ta) Surface Mount TO-252AA
Request a Quote Datasheet
Description
N-Channel 200V 4.9A (Ta) 42W (Ta) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDD2612-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD2612-ND
Single FETs, MOSFETs FDD2612-ND
N-Channel 200V 4.9A (Ta) 42W (Ta) Surface Mount TO-252AA

N-Channel 200V 4.9A (Ta) 42W (Ta) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD2612 - 1038056-FDD2612 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD2612
1038056-FDD2612
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD2612 1038056-FDD2612
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038056-FDD2612 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.9A (Ta) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 234pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 720 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038056-FDD2612
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 4.9A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 234pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 720 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD2612 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD2612
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD2612
MOSFET N-CH 200V 4.9A TO252

MOSFET N-CH 200V 4.9A TO252

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDD2612-ND 1038056-FDD2612 FDD2612
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD2612 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 200 volts
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4 suppliers