onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD2582 FDD2582

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015935-FDD2582 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 95W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 3.7A (Ta), 21A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 1295pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 66 mOhm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD2582 - 015935-FDD2582 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDD2582 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDD2582CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDD2582TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDD2582DKR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD2582 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, N Channel, 21 A, 150 V, 0.058 Ohm, 10 V, 4 V Rohs Compliant Onsemi - 31Y1352 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015935-FDD2582 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 95W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 3.7A (Ta), 21A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 1295pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 66 mOhm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD2582 - 015935-FDD2582 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD2582
015935-FDD2582
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD2582 015935-FDD2582
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015935-FDD2582 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 95W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 3.7A (Ta), 21A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 1295pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 66 mOhm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015935-FDD2582
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 95W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 3.7A (Ta), 21A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 1295pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 66 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDD2582 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDD2582
Single FETs, MOSFETs FDD2582
MOSFET N-CH 150V 3.7/21A TO252AA

MOSFET N-CH 150V 3.7/21A TO252AA

Supplier's Site Datasheet
Single FETs, MOSFETs - FDD2582CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD2582CT-ND
Single FETs, MOSFETs FDD2582CT-ND
N-Channel 150V 3.7A (Ta), 21A (Tc) 95W (Tc) Surface Mount TO-252AA

N-Channel 150V 3.7A (Ta), 21A (Tc) 95W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD2582TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD2582TR-ND
Single FETs, MOSFETs FDD2582TR-ND
N-Channel 150V 3.7A (Ta), 21A (Tc) 95W (Tc) Surface Mount TO-252AA

N-Channel 150V 3.7A (Ta), 21A (Tc) 95W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD2582DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD2582DKR-ND
Single FETs, MOSFETs FDD2582DKR-ND
N-Channel 150V 3.7A (Ta), 21A (Tc) 95W (Tc) Surface Mount TO-252AA

N-Channel 150V 3.7A (Ta), 21A (Tc) 95W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD2582 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD2582
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD2582
MOSFET N-CH 150V 3.7/21A TO252AA

MOSFET N-CH 150V 3.7/21A TO252AA

Supplier's Site
Mosfet Transistor, N Channel, 21 A, 150 V, 0.058 Ohm, 10 V, 4 V Rohs Compliant Onsemi - 31Y1352 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 21 A, 150 V, 0.058 Ohm, 10 V, 4 V Rohs Compliant Onsemi
31Y1352
Mosfet Transistor, N Channel, 21 A, 150 V, 0.058 Ohm, 10 V, 4 V Rohs Compliant Onsemi 31Y1352
MOSFET Transistor, N Channel, 21 A, 150 V, 0.058 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 21 A, 150 V, 0.058 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDD2582
MOSFET FDD2582
MOSFET N-Ch PowerTrench

MOSFET N-Ch PowerTrench

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 015935-FDD2582 FDD2582 FDD2582CT-ND FDD2582 31Y1352 FDD2582
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD2582 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 21 A, 150 V, 0.058 Ohm, 10 V, 4 V Rohs Compliant Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 150 volts 150 volts
PD 95000 milliwatts 95000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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