onsemi Single FETs, MOSFETs FDD2512

Description
N-Channel 150V 6.7A (Ta) 42W (Ta) Surface Mount TO-252AA
Request a Quote Datasheet
Description
N-Channel 150V 6.7A (Ta) 42W (Ta) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - FDD2512-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD2512-ND
Single FETs, MOSFETs FDD2512-ND
N-Channel 150V 6.7A (Ta) 42W (Ta) Surface Mount TO-252AA

N-Channel 150V 6.7A (Ta) 42W (Ta) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD2512 - 1038053-FDD2512 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD2512
1038053-FDD2512
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD2512 1038053-FDD2512
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038053-FDD2512 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 6.7A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 344pF @ 75V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 420 mOhm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038053-FDD2512
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 6.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 344pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 420 mOhm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD2512 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD2512
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD2512
MOSFET N-CH 150V 6.7A TO252

MOSFET N-CH 150V 6.7A TO252

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDD2512-ND 1038053-FDD2512 FDD2512
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD2512 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 150 volts
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