MOSFET N-CH 200V 16A DPAK
N-Channel 200V 16A (Tc) 89W (Tc) Surface Mount TO-252AA
N-Channel 200V 16A (Tc) 89W (Tc) Surface Mount TO-252AA
N-Channel 200V 16A (Tc) 89W (Tc) Surface Mount TO-252AA
MOSFETs 200V NChannel UniFET Product overview: FDD18N20LZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD18N20LZ can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038050-FDD18N20LZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1575pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 125 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
MOSFET, N-CH, 200V, 16A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
MOSFET N-CH 200V 16A DPAK
| ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDD18N20LZ | FDD18N20LZTR-ND | 8648057P | 8648057 | 2088-FDD18N20LZ | 1038050-FDD18N20LZ | 46AC0765 | FDD18N20LZ | FDD18N20LZ |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | N-Channel 200V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD18N20LZ | Mosfet, N-Ch, 200V, 16A, To-252-3; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 200 volts | 200 volts | |||||||
| IDSS | 16000 milliamps | 16000 milliamps | |||||||
| PD | 89000 milliwatts | 89 milliwatts | 89000 milliwatts |
