Power Field-Effect Transistor Product overview: FDD14AN06LA0 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD14AN06LA0 can be used for catalog matching and distributor lookup.
N-Channel 60V 9.5A (Ta), 50A (Tc) 125W (Tc) Surface Mount TO-252AA
MOSFET N-CH 60V 9.5A/50A TO252AA
MOSFET N-CH 60V 50A D-PAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FDD14AN06LA0 | FDD14AN06LA0-ND | FDD14AN06LA0 | 598-FDD14AN06LA0 |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 60V 50A D-PAK |
| Polarity | N-Channel | N-Channel | ||
| PD | 125000 milliwatts | 125000 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
