Power Field-Effect Transistor Product overview: FDD14AN06LA0 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD14AN06LA0 can be used for catalog matching and distributor lookup.
N-Channel 60V 9.5A (Ta), 50A (Tc) 125W (Tc) Surface Mount TO-252AA
MOSFET N-CH 60V 50A D-PAK
MOSFET N-CH 60V 9.5A/50A TO252AA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-FDD14AN06LA0 | FDD14AN06LA0-ND | 598-FDD14AN06LA0 | FDD14AN06LA0 |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | MOSFET N-CH 60V 50A D-PAK | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| PD | 125000 milliwatts | 125000 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
