MOSFET N-CH 60V 11A/50A TO252AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 131373-FDD10AN06A0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 135W (Tc)
Family Name: FDD10AN06A0
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 37nC @ 10V
Max Input Capacitance: 1840pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10.5 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): FDD10AN06A0-F085; AOD2610; 2SK3814-Z-E1; RSD220N06TL;
Introduction Date: August 08, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics, Industrial
Quantity per package: 2,500
N-Channel 60V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA
N-Channel 60V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA
N-Channel 60V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA
POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 60V, 50A, 0.0105OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA, D-PAK SMD. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 60V 11A/50A TO252AA
N CHANNEL MOSFET, 60V, 50A TO-252AA; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDD10AN06A0 | 131373-FDD10AN06A0 | FDD10AN06A0TR-ND | 16119934 | FDD10AN06A0 | 58K8830 | FDD10AN06A0 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD10AN06A0 | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 60V, 50A To-252Aa; Channel Type Onsemi | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 11000 milliamps | 50000 milliamps |