onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD10AN06A0 FDD10AN06A0

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 131373-FDD10AN06A0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Family Name: FDD10AN06A0 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 11A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 37nC @ 10V Max Input Capacitance: 1840pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10.5 mOhm @ 50A, 10V Alternative Parts (Cross-Reference): FDD10AN06A0-F085; AOD2610; 2SK3814-Z-E1; RSD220N06TL; Introduction Date: August 08, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics, Industrial Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD10AN06A0 - 131373-FDD10AN06A0 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDD10AN06A0TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDD10AN06A0DKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDD10AN06A0CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDD10AN06A0 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor - 16119934 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD10AN06A0 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 60V, 50A To-252Aa; Channel Type Onsemi - 58K8830 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 131373-FDD10AN06A0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Family Name: FDD10AN06A0 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 11A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 37nC @ 10V Max Input Capacitance: 1840pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10.5 mOhm @ 50A, 10V Alternative Parts (Cross-Reference): FDD10AN06A0-F085; AOD2610; 2SK3814-Z-E1; RSD220N06TL; Introduction Date: August 08, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics, Industrial Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD10AN06A0 - 131373-FDD10AN06A0 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD10AN06A0
131373-FDD10AN06A0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD10AN06A0 131373-FDD10AN06A0
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 131373-FDD10AN06A0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Family Name: FDD10AN06A0 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 11A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 37nC @ 10V Max Input Capacitance: 1840pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10.5 mOhm @ 50A, 10V Alternative Parts (Cross-Reference): FDD10AN06A0-F085; AOD2610; 2SK3814-Z-E1; RSD220N06TL; Introduction Date: August 08, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics, Industrial Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 131373-FDD10AN06A0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 135W (Tc)
Family Name: FDD10AN06A0
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 37nC @ 10V
Max Input Capacitance: 1840pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10.5 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): FDD10AN06A0-F085; AOD2610; 2SK3814-Z-E1; RSD220N06TL;
Introduction Date: August 08, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics, Industrial
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDD10AN06A0TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD10AN06A0TR-ND
Single FETs, MOSFETs FDD10AN06A0TR-ND
N-Channel 60V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA

N-Channel 60V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD10AN06A0DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD10AN06A0DKR-ND
Single FETs, MOSFETs FDD10AN06A0DKR-ND
N-Channel 60V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA

N-Channel 60V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD10AN06A0CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD10AN06A0CT-ND
Single FETs, MOSFETs FDD10AN06A0CT-ND
N-Channel 60V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA

N-Channel 60V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
60V 50a 1V MOSFET Transistor
2088-FDD10AN06A0
60V 50a 1V MOSFET Transistor 2088-FDD10AN06A0
MOSFETs 60V 50a .15 Ohms/VGS=1V Product overview: FDD10AN06A0 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 50a, 1V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 50a, 1V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD10AN06A0 can be used for catalog matching and distributor lookup.

MOSFETs 60V 50a .15 Ohms/VGS=1V Product overview: FDD10AN06A0 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 50a, 1V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 50a, 1V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD10AN06A0 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - FDD10AN06A0 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDD10AN06A0
Single FETs, MOSFETs FDD10AN06A0
MOSFET N-CH 60V 11A/50A TO252AA

MOSFET N-CH 60V 11A/50A TO252AA

Supplier's Site Datasheet
Transistor - 16119934 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16119934
Transistor 16119934
POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 60V, 50A, 0.0105OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA, D-PAK SMD. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 60V, 50A, 0.0105OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA, D-PAK SMD. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD10AN06A0 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD10AN06A0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD10AN06A0
MOSFET N-CH 60V 11A/50A TO252AA

MOSFET N-CH 60V 11A/50A TO252AA

Supplier's Site
N Channel Mosfet, 60V, 50A To-252Aa; Channel Type Onsemi - 58K8830 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 50A To-252Aa; Channel Type Onsemi
58K8830
N Channel Mosfet, 60V, 50A To-252Aa; Channel Type Onsemi 58K8830
N CHANNEL MOSFET, 60V, 50A TO-252AA; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 50A TO-252AA; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDD10AN06A0
MOSFET FDD10AN06A0
MOSFET 60V 50a .15 Ohms/VGS=1V

MOSFET 60V 50a .15 Ohms/VGS=1V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Radwell International Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 131373-FDD10AN06A0 FDD10AN06A0TR-ND 2088-FDD10AN06A0 FDD10AN06A0 16119934 FDD10AN06A0 58K8830 FDD10AN06A0
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD10AN06A0 Single FETs, MOSFETs 60V 50a 1V MOSFET Transistor Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 60V, 50A To-252Aa; Channel Type Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 135000 milliwatts 135 milliwatts 135000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 Reel TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
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