onsemi Single FETs, MOSFETs FDD10AN06A0

MOSFET N-CH 60V 11A/50A TO252AA

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 131373-FDD10AN06A0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 135W (Tc)
Family Name: FDD10AN06A0
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 37nC @ 10V
Max Input Capacitance: 1840pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10.5 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): FDD10AN06A0-F085; AOD2610; 2SK3814-Z-E1; RSD220N06TL;
Introduction Date: August 08, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics, Industrial
Quantity per package: 2,500

N-Channel 60V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA

N-Channel 60V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA

N-Channel 60V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA

POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 60V, 50A, 0.0105OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA, D-PAK SMD. FREE 2 YEAR RADWELL WARRANTY