Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038042-FDD107AN06LA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.4A (Ta), 10.9A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 5.5nC @ 5V
Max Input Capacitance: 360pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 91 mOhm @ 10.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
N-Channel 60V 3.4A (Ta), 10.9A (Tc) 25W (Tc) Surface Mount TO-252AA
MOSFET N-CH 60V 10.9A D-PAK Product overview: FDD107AN06LA0 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 10.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 10.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD107AN06LA0 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 3.4A/10.9A TO252
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1038042-FDD107AN06LA0 | FDD107AN06LA0-ND | 278-FDD107AN06LA0 | FDD107AN06LA0 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD107AN06LA0 | Single FETs, MOSFETs | 60V 10.9A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |
| V(BR)DSS | 60 volts | |||
| PD | 25000 milliwatts | 25000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |