onsemi Single FETs, MOSFETs FDC8884

Description
N-Channel 30V 6.5A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6
Request a Quote Datasheet
Description
N-Channel 30V 6.5A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDC8884TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC8884TR-ND
Single FETs, MOSFETs FDC8884TR-ND
N-Channel 30V 6.5A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6

N-Channel 30V 6.5A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC8884 - 1038039-FDC8884 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC8884
1038039-FDC8884
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC8884 1038039-FDC8884
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038039-FDC8884 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-SSOT Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.5A (Ta), 8A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 7.4nC @ 10V Max Input Capacitance: 465pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 23 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038039-FDC8884
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-SSOT
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.5A (Ta), 8A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7.4nC @ 10V
Max Input Capacitance: 465pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 23 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDC8884
MOSFET FDC8884
MOSFET 30V N-Channel PowerTrench MOSFET

MOSFET 30V N-Channel PowerTrench MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC8884 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDC8884
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDC8884
MOSFET N-CH 30V 6.5/8A SUPERSOT6

MOSFET N-CH 30V 6.5/8A SUPERSOT6

Supplier's Site
Mosfet, N-Ch, 8A, 30V, Supersot; Transistor Polarity Onsemi - 07AH3895 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 8A, 30V, Supersot; Transistor Polarity Onsemi
07AH3895
Mosfet, N-Ch, 8A, 30V, Supersot; Transistor Polarity Onsemi 07AH3895
MOSFET, N-CH, 8A, 30V, SUPERSOT; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 8A, 30V, SUPERSOT; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power DissipationRoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDC8884TR-ND 1038039-FDC8884 FDC8884 FDC8884 07AH3895
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC8884 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 8A, 30V, Supersot; Transistor Polarity Onsemi
Polarity N-Channel N-Channel; N-Channel
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; SOT23; 6-SSOT SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3
V(BR)DSS 30 volts
PD 1600 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1340026-UF3C065030B3 - Win Source Electronics
Specs
Polarity N-Channel
PD 242000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
View Details
4 suppliers
Single FETs, MOSFETs - 94-2335-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63
View Details
2 suppliers
GaAs Fet Switches - KCB821 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details