onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC8878 FDC8878

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038038-FDC8878 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: FDC8878 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8A (Ta), 8A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 1040pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): BSL302SNL6327XT; BSL302SN; BSL302SNH6327XTSA1; Introduction Date: March 15, 2011 ECCN: EAR99 Country of Origin: Philippines, Taiwan Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038038-FDC8878 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: FDC8878 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8A (Ta), 8A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 1040pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): BSL302SNL6327XT; BSL302SN; BSL302SNH6327XTSA1; Introduction Date: March 15, 2011 ECCN: EAR99 Country of Origin: Philippines, Taiwan Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC8878 - 1038038-FDC8878 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC8878
1038038-FDC8878
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC8878 1038038-FDC8878
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038038-FDC8878 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: FDC8878 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8A (Ta), 8A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 1040pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): BSL302SNL6327XT; BSL302SN; BSL302SNH6327XTSA1; Introduction Date: March 15, 2011 ECCN: EAR99 Country of Origin: Philippines, Taiwan Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038038-FDC8878
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: FDC8878
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A (Ta), 8A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 1040pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): BSL302SNL6327XT; BSL302SN; BSL302SNH6327XTSA1;
Introduction Date: March 15, 2011
ECCN: EAR99
Country of Origin: Philippines, Taiwan
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDC8878DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC8878DKR-ND
Single FETs, MOSFETs FDC8878DKR-ND
N-Channel 30V 8A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6

N-Channel 30V 8A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Single FETs, MOSFETs - FDC8878CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC8878CT-ND
Single FETs, MOSFETs FDC8878CT-ND
N-Channel 30V 8A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6

N-Channel 30V 8A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Single FETs, MOSFETs - FDC8878TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC8878TR-ND
Single FETs, MOSFETs FDC8878TR-ND
N-Channel 30V 8A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6

N-Channel 30V 8A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDC8878
MOSFET FDC8878
MOSFET 30V N-Channel PowerTrench MOSFET

MOSFET 30V N-Channel PowerTrench MOSFET

Buy Now Datasheet
Mosfet, N-Ch, 30V, 8A, Supersot-6; Transistor Polarity Onsemi - 46AC0762 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 8A, Supersot-6; Transistor Polarity Onsemi
46AC0762
Mosfet, N-Ch, 30V, 8A, Supersot-6; Transistor Polarity Onsemi 46AC0762
MOSFET, N-CH, 30V, 8A, SUPERSOT-6; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 8A, SUPERSOT-6; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC8878 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDC8878
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDC8878
MOSFET N-CH 30V 8A/8A SUPERSOT6

MOSFET N-CH 30V 8A/8A SUPERSOT6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1038038-FDC8878 FDC8878DKR-ND FDC8878 46AC0762 FDC8878
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC8878 Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 30V, 8A, Supersot-6; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 1600 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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