Mosfet Array 2 N-Channel (Dual) 100V 1.2A 690mW Surface Mount SuperSOT™-6
Mosfet Array 2 N-Channel (Dual) 100V 1.2A 690mW Surface Mount SuperSOT™-6
Mosfet Array 2 N-Channel (Dual) 100V 1.2A 690mW Surface Mount SuperSOT™-6
MOSFET 2N-CH 100V 1.2A 6-SSOT
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038037-FDC8602
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 690mW
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.2A
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 2nC @ 10V
Max Input Capacitance: 70pF @ 50V
Maximum Rds On at Id,Vgs: 350 mOhm @ 1.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFETs NCH DUAL COOL POWERTRENCH MOSFET Product overview: FDC8602 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDC8602 can be used for catalog matching and distributor lookup.
MOSFET NCH DUAL COOL POWERTRENCH MOSFET
MOSFET 2N-CH 100V 1.2A SSOT6
MOSFET, DUAL N-CH, 100V, 1.2A/150DEG C; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.2A; On Resistance Rds(on):0.285ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDC8602CT-ND | FDC8602 | 1038037-FDC8602 | 2088-FDC8602 | FDC8602 | FDC8602 | 57AC1881 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC8602 | Dual MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 100V, 1.2A/150Deg C; Transistor Polarity Onsemi |
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SuperSOT-6 | Reel | TO-3 | ||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 1200 milliamps | 1200 milliamps |
