Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 119721-FDC8601
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-SSOT
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 2.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 5nC @ 10V
Max Input Capacitance: 210pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 109 mOhm @ 2.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs
MOSFET N-CH 100V 2.7A SUPERSOT6
N-Channel 100V 2.7A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
N-Channel 100V 2.7A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
N-Channel 100V 2.7A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
MOSFET N-CH 100V 2.7A SUPERSOT6
MOSFET 100V N-Channel PowerTrench MOSFET
MOSFET, N CHANNEL, 100V, 0.086OHM, 2.7A, SUPERSOT-6, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:2.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; No. of Pins:6Pins RoHS Compliant: Yes
MOSFET, N CHANNEL, 100V, 0.086OHM, 2.7A, SUPERSOT-6; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:2.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.6W RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 119721-FDC8601 | FDC8601 | 1869007P | 1867149 | FDC8601TR-ND | FDC8601 | FDC8601 | 92R5520 | 85W3137 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC8601 | Single FETs, MOSFETs | Bipolar Transistors | Bipolar Transistors | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Channel, 100V, 0.086Ohm, 2.7A, Supersot-6, Full Reel; Channel Type Onsemi | Mosfet, N Channel, 100V, 0.086Ohm, 2.7A, Supersot-6; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 100 volts | 100 volts | |||||||
| PD | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | 150 C (302 F) | ||||||
| Package Type | SOT3; SOT23; 6-SSOT | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; TSOT-23 | SOT23; Tsot-23 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 | TO-3 |
