MOSFET N-CH 30V 6.1A SUPERSOT6
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015931-FDC855N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.1A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 655pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 6.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs
N-Channel 30V 6.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
N-Channel 30V 6.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
N-Channel 30V 6.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
MOSFET 30V Single NCh Logic Level PowerTrench
MOSFET, N CHANNEL, 30V, 0.0207OHM, 6.1A, SUPERSOT-6; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.6W RoHS Compliant: Yes
MOSFET N-CH 30V 6.1A SUPERSOT6
30V 6.1A 1.6W 27mΩ@10V,6.1A 3V@250uA N Channel TSOP-6-1.5mm MOSFETs ROHS
| ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDC855N | 015931-FDC855N | 8090871 | 8090871P | FDC855NCT-ND | FDC855N | 84W8850 | FDC855N | FDC855N |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC855N | MOSFETs | MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N Channel, 30V, 0.0207Ohm, 6.1A, Supersot-6; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 6100 milliamps | 6100 milliamps | 6100 milliamps | 6100 milliamps | |||||
| PD | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts |
