N-Channel 30V 6.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
N-Channel 30V 6.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
N-Channel 30V 6.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
N-Ch JFET, 30V, 6.1A, 27mR, SOT-23-6, Logic Level Product overview: FDC855N from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.1A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.1A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDC855N can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015931-FDC855N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.1A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 655pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 6.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs
MOSFET N-CH 30V 6.1A SUPERSOT6
MOSFET 30V Single NCh Logic Level PowerTrench
MOSFET N-CH 30V 6.1A SUPERSOT6
MOSFET, N CHANNEL, 30V, 0.0207OHM, 6.1A, SUPERSOT-6; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.6W RoHS Compliant: Yes
30V 6.1A 1.6W 27mΩ@10V,6.1A 3V@250uA N Channel TSOP-6-1.5mm MOSFETs ROHS
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDC855NCT-ND | 278-FDC855N | 8090871 | 8090871P | 015931-FDC855N | FDC855N | FDC855N | FDC855N | 84W8850 | FDC855N |
| Product Name | Single FETs, MOSFETs | 30V 6.1A SOT-23 MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC855N | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 30V, 0.0207Ohm, 6.1A, Supersot-6; Channel Type Onsemi | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; Sot-23 | SOT23; SOT-23 | SOT3; SOT23; SuperSOT-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 | |||
| PD | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| MOSFET Operating Mode | Enhancement |
