onsemi Single FETs, MOSFETs FDC855N

Description
MOSFET N-CH 30V 6.1A SUPERSOT6
Request a Quote Datasheet
Description
MOSFET N-CH 30V 6.1A SUPERSOT6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDC855N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDC855N
Single FETs, MOSFETs FDC855N
MOSFET N-CH 30V 6.1A SUPERSOT6

MOSFET N-CH 30V 6.1A SUPERSOT6

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC855N - 015931-FDC855N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC855N
015931-FDC855N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC855N 015931-FDC855N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015931-FDC855N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.1A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 655pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 27 mOhm @ 6.1A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015931-FDC855N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.1A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 655pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 6.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs

Buy Now Datasheet
MOSFETs - 8090871 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8090871
MOSFETs 8090871
MOSFET, Fairchild, FDC855N

MOSFET, Fairchild, FDC855N

Supplier's Site
MOSFETs - 8090871P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8090871P
MOSFETs 8090871P
MOSFET, Fairchild, FDC855N

MOSFET, Fairchild, FDC855N

Supplier's Site
MOSFETs - 1663629 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1663629
MOSFETs 1663629
MOSFET, Fairchild, FDC855N

MOSFET, Fairchild, FDC855N

Supplier's Site
Single FETs, MOSFETs - FDC855NCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC855NCT-ND
Single FETs, MOSFETs FDC855NCT-ND
N-Channel 30V 6.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

N-Channel 30V 6.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Single FETs, MOSFETs - FDC855NTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC855NTR-ND
Single FETs, MOSFETs FDC855NTR-ND
N-Channel 30V 6.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

N-Channel 30V 6.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Single FETs, MOSFETs - FDC855NDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC855NDKR-ND
Single FETs, MOSFETs FDC855NDKR-ND
N-Channel 30V 6.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

N-Channel 30V 6.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDC855N
MOSFET FDC855N
MOSFET 30V Single NCh Logic Level PowerTrench

MOSFET 30V Single NCh Logic Level PowerTrench

Buy Now Datasheet
Mosfet, N Channel, 30V, 0.0207Ohm, 6.1A, Supersot-6; Channel Type Onsemi - 84W8850 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 30V, 0.0207Ohm, 6.1A, Supersot-6; Channel Type Onsemi
84W8850
Mosfet, N Channel, 30V, 0.0207Ohm, 6.1A, Supersot-6; Channel Type Onsemi 84W8850
MOSFET, N CHANNEL, 30V, 0.0207OHM, 6.1A, SUPERSOT-6; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.6W RoHS Compliant: Yes

MOSFET, N CHANNEL, 30V, 0.0207OHM, 6.1A, SUPERSOT-6; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.6W RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC855N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDC855N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDC855N
MOSFET N-CH 30V 6.1A SUPERSOT6

MOSFET N-CH 30V 6.1A SUPERSOT6

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FDC855N
Triode/MOS Tube/Transistor >> MOSFETs FDC855N
30V 6.1A 1.6W 27mΩ@10V,6.1A 3V@250uA N Channel TSOP-6-1.5mm MOSFETs ROHS

30V 6.1A 1.6W 27mΩ@10V,6.1A 3V@250uA N Channel TSOP-6-1.5mm MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics RS Components, Ltd. RS Components, Ltd. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDC855N 015931-FDC855N 8090871 8090871P FDC855NCT-ND FDC855N 84W8850 FDC855N FDC855N
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC855N MOSFETs MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N Channel, 30V, 0.0207Ohm, 6.1A, Supersot-6; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts 30 volts 30 volts 30 volts
IDSS 6100 milliamps 6100 milliamps 6100 milliamps 6100 milliamps
PD 1600 milliwatts 1600 milliwatts 1600 milliwatts 1600 milliwatts
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