The FDC658P is a P-Channel MOSFET designed for applications requiring efficient load switching and power management, particularly in notebook computers and battery charging circuits. It features a maximum drain-source voltage of -30 V and a continuous drain current rating of -4 A. The device exhibits a low on-resistance of 50 mOc at a gate-source voltage of -10 V, and 75 mOc at -4.5 V, which contributes to its superior switching performance. With a low gate charge of 8 nC, the FDC658P is suitable for high-speed applications. It is housed in a compact SuperSOT-6 package, which is 72% smaller than standard SO-8 packages, making it ideal for space-constrained designs. The operating temperature range extends from -55¬8C to 150¬8C, ensuring reliability in various environments. This MOSFET is also Pb-free, aligning with modern environmental standards. Engineers looking for a reliable and efficient P-Channel MOSFET for power management applications may find the FDC658P to be a suitable choice.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015930-FDC658P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: FDC658P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 750pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): TSM3481CX6 RFG; RSQ035P03HZGTR; RSQ035P03FRATR; DMP3050LVT-7;
Introduction Date: March 17, 1999
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Portable Devices, Computers & Computer Peripherals
Quantity per package: 3k pcs
MOSFETs SSOT-6 P-CH -30V Product overview: FDC658P from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDC658P can be used for catalog matching and distributor lookup.
P-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
P-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
P-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
MOSFET P-CH 30V 4A SUPERSOT6
MOSFET P-Channel 30V 4A SuperSOT6
MOSFET, P CHANNEL, -30V, -4A, SUPERSOT-6; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes
MOSFET Transistor, P Channel, -4 A, -30 V, 0.041 ohm, -10 V, -1.7 V RoHS Compliant: Yes
MOSFET P-CH 30V 4A SUPERSOT6
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 015930-FDC658P | 2088-FDC658P | FDC658PTR-ND | FDC658P | 6710359 | 6710359P | 29X6683 | 25M9448 | FDC658P | FDC658P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC658P | -30V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | Mosfet, P Channel, -30V, -4A, Supersot-6; Channel Type Onsemi | Mosfet Transistor, P Channel, -4 A, -30 V, 0.041 Ohm, -10 V, -1.7 V Rohs Compliant Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||||||||
| PD | 1600 milliwatts | 1.6 milliwatts | 1600 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| Package Type | SOT3; SOT23; SuperSOT-6 | Reel | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; Sot-23 | SOT23; SOT-23 | TO-3 | TO-3 | SOT23; SOT-23-6 Thin, TSOT-23-6 |
