MOSFET 2N-CH 30V 2.5A SSOT6
Mosfet Array 2 N-Channel (Dual) 30V 2.5A 700mW Surface Mount SuperSOT™-6
Mosfet Array 2 N-Channel (Dual) 30V 2.5A 700mW Surface Mount SuperSOT™-6
Mosfet Array 2 N-Channel (Dual) 30V 2.5A 700mW Surface Mount SuperSOT™-6
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015928-FDC6561AN
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDC6561AN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 3.2nC @ 5V
Max Input Capacitance: 220pF @ 15V
Maximum Rds On at Id,Vgs: 95 mOhm @ 2.5A, 10V
Alternative Parts (Cross-Reference): TPC6201(TE85L); TPC6201(TE85L,F,M); TPC6201(TE85L,F);
Introduction Date: June 08, 1999
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
Quantity per package: 3k pcs
MOSFET N-Channel 30V 2.5A SuperSOT6
MOSFET N-Channel 30V 2.5A SuperSOT6
MOSFET N-Channel 30V 2.5A SuperSOT6
TSOT-26 MOSFETs ROHS
DUAL N CHANNEL MOSFET, 30V, SUPER SOT-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; On Resistance Rds(on):0.082ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; On Resistance Rds(on):0.082ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation Pd:1.6W RoHS Compliant: Yes
MOSFET 2N-CH 30V 2.5A SSOT6
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDC6561AN | FDC6561ANCT-ND | 015928-FDC6561AN | 7619838 | 7619838P | FDC6561AN | FDC6561AN | 58K8828 | 67R2043 | FDC6561AN |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6561AN | MOSFETs | MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Dual N Channel Mosfet, 30V, Super Sot-6; Transistor Polarity Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 30 volts | 30 volts | ||||||||
| IDSS | 2500 milliamps | 2500 milliamps | 2500 milliamps | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
