onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC655AN FDC655AN

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066920-FDC655AN
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: FDC655AN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 13nC @ 5V
Max Input Capacitance: 830pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 6.3A, 10V
Alternative Parts (Cross-Reference): DMG6402LVT-7; DMG6402LVT-13; STT6N3LLH6;
Introduction Date: June 29, 1998
ECCN: EAR99
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient

Small Signal Field-Effect Transistor, 6.3A, 30V, N-Channel MOSFET

N-Channel 30V 6.3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

MOSFET N-CH 30V 6.3A 6-SSOT Product overview: FDC655AN from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDC655AN can be used for catalog matching and distributor lookup.