Small Signal Field-Effect Transistor, 6.3A, 30V, N-Channel MOSFET
N-Channel 30V 6.3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066920-FDC655AN
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: FDC655AN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 13nC @ 5V
Max Input Capacitance: 830pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 6.3A, 10V
Alternative Parts (Cross-Reference): DMG6402LVT-7; DMG6402LVT-13; STT6N3LLH6;
Introduction Date: June 29, 1998
ECCN: EAR99
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 6.3A SUPERSOT6
| Rochester Electronics | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | RF MOSFET Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDC655AN | FDC655AN-ND | 066920-FDC655AN | FDC655AN |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC655AN | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |
| Package Type | CPH6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; SuperSOT-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 |
| V(BR)DSS | 30 volts |
