Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015924-FDC6506P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDC6506P
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.8A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 3.5nC @ 10V
Max Input Capacitance: 190pF @ 15V
Maximum Rds On at Id,Vgs: 170 mOhm @ 1.8A, 10V
Alternative Parts (Cross-Reference): AP2623GY-HF-3TR; AP2625GY-HF-3TR;
Introduction Date: March 17, 1999
ECCN: EAR99
Country of Origin: Israel, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET 2P-CH 30V 1.8A SSOT6
Mosfet Array 2 P-Channel (Dual) 30V 1.8A 700mW Surface Mount SuperSOT™-6
Dual P-Channel JFET, -30V, -1.8A, 170mR, SOT-23-6 Product overview: FDC6506P from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, -30V, -1.8A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, -30V, -1.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDC6506P can be used for catalog matching and distributor lookup.
DUAL P CHANNEL MOSFET, -30V, SUPER SOT-6; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3A; On Resistance Rds(on):0.17ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.8A; On Resistance Rds(on):0.17ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation Pd:960mW RoHS Compliant: Yes
MOSFET 2P-CH 30V 1.8A SSOT6
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 015924-FDC6506P | FDC6506P | FDC6506PTR-ND | 289-FDC6506P | 58K8826 | 67R2041 | FDC6506P | FDC6506P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6506P | FET, MOSFET Arrays | FET, MOSFET Arrays | P-Channel Dual -30V -1.8A MOSFET Transistor | Dual P Channel Mosfet, -30V, Super Sot-6; Transistor Polarity Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| PD | 700 milliwatts | 960 milliwatts | 960 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | |||||
| Package Type | SOT3; SuperSOT-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 | TO-3 |
