onsemi FET, MOSFET Arrays FDC6506P

Description
Mosfet Array 2 P-Channel (Dual) 30V 1.8A 700mW Surface Mount SuperSOT™-6
Request a Quote Datasheet
Description
Mosfet Array 2 P-Channel (Dual) 30V 1.8A 700mW Surface Mount SuperSOT™-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDC6506PTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDC6506PTR-ND
FET, MOSFET Arrays FDC6506PTR-ND
Mosfet Array 2 P-Channel (Dual) 30V 1.8A 700mW Surface Mount SuperSOT™-6

Mosfet Array 2 P-Channel (Dual) 30V 1.8A 700mW Surface Mount SuperSOT™-6

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6506P - 015924-FDC6506P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6506P
015924-FDC6506P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6506P 015924-FDC6506P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015924-FDC6506P Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDC6506P Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Maximum Power Dissipation: 700mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.8A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 3.5nC @ 10V Max Input Capacitance: 190pF @ 15V Maximum Rds On at Id,Vgs: 170 mOhm @ 1.8A, 10V Alternative Parts (Cross-Reference): AP2623GY-HF-3TR; AP2625GY-HF-3TR; Introduction Date: March 17, 1999 ECCN: EAR99 Country of Origin: Israel, Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015924-FDC6506P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDC6506P
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.8A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 3.5nC @ 10V
Max Input Capacitance: 190pF @ 15V
Maximum Rds On at Id,Vgs: 170 mOhm @ 1.8A, 10V
Alternative Parts (Cross-Reference): AP2623GY-HF-3TR; AP2625GY-HF-3TR;
Introduction Date: March 17, 1999
ECCN: EAR99
Country of Origin: Israel, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
FET, MOSFET Arrays - FDC6506P - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDC6506P
FET, MOSFET Arrays FDC6506P
MOSFET 2P-CH 30V 1.8A SSOT6

MOSFET 2P-CH 30V 1.8A SSOT6

Supplier's Site Datasheet
Dual P Channel Mosfet, -30V, Super Sot-6; Transistor Polarity Onsemi - 58K8826 - Newark, An Avnet Company
Chicago, IL, United States
Dual P Channel Mosfet, -30V, Super Sot-6; Transistor Polarity Onsemi
58K8826
Dual P Channel Mosfet, -30V, Super Sot-6; Transistor Polarity Onsemi 58K8826
DUAL P CHANNEL MOSFET, -30V, SUPER SOT-6; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3A; On Resistance Rds(on):0.17ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

DUAL P CHANNEL MOSFET, -30V, SUPER SOT-6; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3A; On Resistance Rds(on):0.17ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, Full Reel; Transistor Polarity Onsemi - 67R2041 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Full Reel; Transistor Polarity Onsemi
67R2041
Mosfet, Full Reel; Transistor Polarity Onsemi 67R2041
MOSFET, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.8A; On Resistance Rds(on):0.17ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation Pd:960mW RoHS Compliant: Yes

MOSFET, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.8A; On Resistance Rds(on):0.17ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation Pd:960mW RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
FDC6506P
MOSFET FDC6506P
MOSFET SSOT-6 P-CH -30V

MOSFET SSOT-6 P-CH -30V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC6506P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDC6506P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDC6506P
MOSFET 2P-CH 30V 1.8A SSOT6

MOSFET 2P-CH 30V 1.8A SSOT6

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDC6506PTR-ND 015924-FDC6506P FDC6506P 58K8826 67R2041 FDC6506P FDC6506P
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6506P FET, MOSFET Arrays Dual P Channel Mosfet, -30V, Super Sot-6; Transistor Polarity Onsemi Mosfet, Full Reel; Transistor Polarity Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; SuperSOT-6 SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3 TO-3
Polarity P-Channel P-Channel; 2 P-Channel (Dual) P-Channel
V(BR)DSS 30 volts 30 volts
PD 700 milliwatts 960 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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