onsemi Single FETs, MOSFETs FDC645N

N-Channel 30V 5.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

N-Channel 30V 5.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

N-Channel 30V 5.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

MOSFETs SSOT-6 N-CH Product overview: FDC645N from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDC645N can be used for catalog matching and distributor lookup.

MOSFET N-Ch 30V 5A PowerTrench SuperSOT6

MOSFET N-Ch 30V 5A PowerTrench SuperSOT6

MOSFET N-Ch 30V 5A PowerTrench SuperSOT6

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015923-FDC645N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.5A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 21nC @ 4.5V
Max Input Capacitance: 1460pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 26 mOhm @ 6.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs