onsemi FET, MOSFET Arrays FDC6432SH

Description
Small Signal Field-Effect Transistor, 2.4A, 30V, 2-Element, N-Channel and P-Channel, MOSFET
Request a Quote Datasheet
Description
Small Signal Field-Effect Transistor, 2.4A, 30V, 2-Element, N-Channel and P-Channel, MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FDC6432SH - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, 2.4A, 30V, 2-Element, N-Channel and P-Channel, MOSFET

Small Signal Field-Effect Transistor, 2.4A, 30V, 2-Element, N-Channel and P-Channel, MOSFET

Supplier's Site Datasheet
FET, MOSFET Arrays - FDC6432SH-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDC6432SH-ND
FET, MOSFET Arrays FDC6432SH-ND
Mosfet Array N and P-Channel 30V, 12V 2.4A, 2.5A 700mW Surface Mount SuperSOT™-6

Mosfet Array N and P-Channel 30V, 12V 2.4A, 2.5A 700mW Surface Mount SuperSOT™-6

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6432SH - 1038031-FDC6432SH - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6432SH
1038031-FDC6432SH
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6432SH 1038031-FDC6432SH
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038031-FDC6432SH Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Maximum Power Dissipation: 700mW Drain-Source Breakdown Voltage: 30V, 12V Continuous Drain Current at 25°C: 2.4A, 2.5A Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 3.5nC @ 5V Max Input Capacitance: 270pF @ 15V Maximum Rds On at Id,Vgs: 90 mOhm @ 2.4A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038031-FDC6432SH
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 30V, 12V
Continuous Drain Current at 25°C: 2.4A, 2.5A
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 3.5nC @ 5V
Max Input Capacitance: 270pF @ 15V
Maximum Rds On at Id,Vgs: 90 mOhm @ 2.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC6432SH - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDC6432SH
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDC6432SH
MOSFET N/P-CH 30V/12V 2.4A SSOT6

MOSFET N/P-CH 30V/12V 2.4A SSOT6

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF MOSFET Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDC6432SH FDC6432SH-ND 1038031-FDC6432SH FDC6432SH
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6432SH Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; P-Channel P-Channel
Package Type CPH6 SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; SuperSOT-6
V(BR)DSS 30 to 12 volts
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