MOSFET 2N-CH 20V 3A SSOT-6
Mosfet Array 2 N-Channel (Dual) 20V 3A 700mW Surface Mount SuperSOT™-6
Mosfet Array 2 N-Channel (Dual) 20V 3A 700mW Surface Mount SuperSOT™-6
Mosfet Array 2 N-Channel (Dual) 20V 3A 700mW Surface Mount SuperSOT™-6
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015919-FDC6401N
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDC6401N
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4.6nC @ 4.5V
Max Input Capacitance: 324pF @ 10V
Maximum Rds On at Id,Vgs: 70 mOhm @ 3A, 4.5V
Alternative Parts (Cross-Reference): IRF5852; IRF5852PBF; IRF5852TRPBF;
Introduction Date: October 01, 2001
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Quantity per package: 3k pcs
MOSFETs Dual N-Ch 2.5V Spec Power Trench Product overview: FDC6401N from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 2.5V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 2.5V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDC6401N can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 20V 3A SSOT6
MOSFET Dual N-Ch 2.5V Spec Power Trench
DUAL N CHANNEL MOSFET, 20V, SUPER SOT-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3A; On Resistance Rds(on):0.05ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
Dual MOSFET, Dual N Channel, 3 A, 20 V, 70 mohm, 4.5 V, 900 mV RoHS Compliant: Yes
MOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3A; On Resistance Rds(on):0.05ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation Pd:960mW RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDC6401N | FDC6401NTR-ND | 8090852P | 8090852 | 015919-FDC6401N | 2088-FDC6401N | FDC6401N | FDC6401N | 82C2449 | 58M6621 | 67R2039 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6401N | Dual 2.5V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Dual N Channel Mosfet, 20V, Super Sot-6; Transistor Polarity Onsemi | Dual Mosfet, Dual N Channel, 3 A, 20 V, 70 Mohm, 4.5 V, 900 Mv Rohs Compliant Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||||
| V(BR)DSS | 20 volts | 20 volts | |||||||||
| IDSS | 3000 milliamps | 3000 milliamps | 3000 milliamps | ||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
