MOSFET P-Channel 20V 4.5A SuperSOT6
MOSFET P-Channel 20V 4.5A SuperSOT6
MOSFET P-Channel 20V 4.5A SuperSOT6
MOSFET P-CH 20V 4.5A SUPERSOT6
P-Channel 20V 4.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
P-Channel 20V 4.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
P-Channel 20V 4.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015917-FDC638P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: FDC638P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 1160pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 48 mOhm @ 4.5A, 4.5V
Alternative Parts (Cross-Reference): IRLMS6802; TPC6101(TE85L); TPC6101(TE85L,F);
Introduction Date: June 24, 1999
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs
P MOSFET, -20V, 4.5A, SUPER SOT-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:800mV RoHS Compliant: Yes
P MOSFET, -20V, 4.5A, SUPER SOT-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1.6W RoHS Compliant: Yes
| RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 7614413P | 7614413 | FDC638P | FDC638PCT-ND | 015917-FDC638P | FDC638P | 67P3458 | 38C7108 |
| Product Name | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC638P | MOSFET | P Mosfet, -20V, 4.5A, Super Sot-6; Channel Type Onsemi | P Mosfet, -20V, 4.5A, Super Sot-6, Full Reel; Channel Type Onsemi |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | |||
| Package Type | SOT23; SOT-23 | SOT23; Sot-23 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; SuperSOT-6 | TO-3 | TO-3 | |
| MOSFET Operating Mode | Enhancement | |||||||
| Number of units in IC | 1 | |||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |