onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC637BNZ FDC637BNZ

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 126928-FDC637BNZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: FDC637BNZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.2A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 12nC @ 4.5V Max Input Capacitance: 895pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 24 mOhm @ 6.2A, 4.5V Alternative Parts (Cross-Reference): TSM3460CX6; TSM3446CX6; TSM3462CX6; Introduction Date: July 28, 2006 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 126928-FDC637BNZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: FDC637BNZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.2A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 12nC @ 4.5V Max Input Capacitance: 895pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 24 mOhm @ 6.2A, 4.5V Alternative Parts (Cross-Reference): TSM3460CX6; TSM3446CX6; TSM3462CX6; Introduction Date: July 28, 2006 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC637BNZ - 126928-FDC637BNZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC637BNZ
126928-FDC637BNZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC637BNZ 126928-FDC637BNZ
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 126928-FDC637BNZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: FDC637BNZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.2A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 12nC @ 4.5V Max Input Capacitance: 895pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 24 mOhm @ 6.2A, 4.5V Alternative Parts (Cross-Reference): TSM3460CX6; TSM3446CX6; TSM3462CX6; Introduction Date: July 28, 2006 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 126928-FDC637BNZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: FDC637BNZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.2A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 12nC @ 4.5V
Max Input Capacitance: 895pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 24 mOhm @ 6.2A, 4.5V
Alternative Parts (Cross-Reference): TSM3460CX6; TSM3446CX6; TSM3462CX6;
Introduction Date: July 28, 2006
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDC637BNZ - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDC637BNZ
Single FETs, MOSFETs FDC637BNZ
MOSFET N-CH 20V 6.2A SUPERSOT6

MOSFET N-CH 20V 6.2A SUPERSOT6

Supplier's Site Datasheet
Singapore
N-Channel 20V 2.5V MOSFET Transistor
2088-FDC637BNZ
N-Channel 20V 2.5V MOSFET Transistor 2088-FDC637BNZ
MOSFETs 20V N-Channel 2.5V Spec PowerTrench Product overview: FDC637BNZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 2.5V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.5V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDC637BNZ can be used for catalog matching and distributor lookup.

MOSFETs 20V N-Channel 2.5V Spec PowerTrench Product overview: FDC637BNZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 2.5V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.5V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDC637BNZ can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - FDC637BNZCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC637BNZCT-ND
Single FETs, MOSFETs FDC637BNZCT-ND
N-Channel 20V 6.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

N-Channel 20V 6.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Single FETs, MOSFETs - FDC637BNZDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC637BNZDKR-ND
Single FETs, MOSFETs FDC637BNZDKR-ND
N-Channel 20V 6.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

N-Channel 20V 6.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Single FETs, MOSFETs - FDC637BNZTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC637BNZTR-ND
Single FETs, MOSFETs FDC637BNZTR-ND
N-Channel 20V 6.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

N-Channel 20V 6.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Mosfet Transistor, N Channel, 6.2 A, 20 V, 0.021 Ohm, 4.5 V, 800 Mv Rohs Compliant Onsemi - 95W3155 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 6.2 A, 20 V, 0.021 Ohm, 4.5 V, 800 Mv Rohs Compliant Onsemi
95W3155
Mosfet Transistor, N Channel, 6.2 A, 20 V, 0.021 Ohm, 4.5 V, 800 Mv Rohs Compliant Onsemi 95W3155
MOSFET Transistor, N Channel, 6.2 A, 20 V, 0.021 ohm, 4.5 V, 800 mV RoHS Compliant: Yes

MOSFET Transistor, N Channel, 6.2 A, 20 V, 0.021 ohm, 4.5 V, 800 mV RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Channel, 20V, 0.021Ohm, 6.2A, Supersot-6; Transistor Polarity Onsemi - 84W8849 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 20V, 0.021Ohm, 6.2A, Supersot-6; Transistor Polarity Onsemi
84W8849
Mosfet, N Channel, 20V, 0.021Ohm, 6.2A, Supersot-6; Transistor Polarity Onsemi 84W8849
MOSFET, N CHANNEL, 20V, 0.021OHM, 6.2A, SUPERSOT-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.2A; On Resistance Rds(on):0.021ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes

MOSFET, N CHANNEL, 20V, 0.021OHM, 6.2A, SUPERSOT-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.2A; On Resistance Rds(on):0.021ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 20V N-Channel 2.5V Spec PowerTrench

MOSFET 20V N-Channel 2.5V Spec PowerTrench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC637BNZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDC637BNZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDC637BNZ
MOSFET N-CH 20V 6.2A SUPERSOT6

MOSFET N-CH 20V 6.2A SUPERSOT6

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 126928-FDC637BNZ FDC637BNZ 2088-FDC637BNZ FDC637BNZCT-ND 95W3155 84W8849 FDC637BNZ FDC637BNZ
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC637BNZ Single FETs, MOSFETs N-Channel 20V 2.5V MOSFET Transistor Single FETs, MOSFETs Mosfet Transistor, N Channel, 6.2 A, 20 V, 0.021 Ohm, 4.5 V, 800 Mv Rohs Compliant Onsemi Mosfet, N Channel, 20V, 0.021Ohm, 6.2A, Supersot-6; Transistor Polarity Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 20 volts 20 volts
PD 1600 milliwatts 1600 milliwatts 1.6 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SuperSOT-6 SOT23; SOT-23-6 Thin, TSOT-23-6 Reel SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3 TO-3 SOT23; SOT-23-6 Thin, TSOT-23-6
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