The FDC637AN is a single N-Channel MOSFET designed for low-voltage applications, featuring a maximum drain-source voltage of 20 V and a continuous drain current rating of 6.2 A. It utilizes onsemi's POWERTRENCH technology, which minimizes on-state resistance while maintaining low gate charge, resulting in efficient switching performance. The device has an on-resistance of 24 mOc at a gate-source voltage of 4.5 V and 32 mOc at 2.5 V. This MOSFET is packaged in a compact SuperSOT-6 form factor, which is 72% smaller than standard SO-8 packages, making it suitable for space-constrained designs. It operates over a wide temperature range from -55¬8C to +150¬8C and is compliant with RoHS standards, being both Pb-free and halide-free. Typical applications include DC/DC converters, load switches, and battery protection circuits. The device also features fast switching speeds and low gate charge, with a typical total gate charge of 10.5 nC. Engineers looking for a reliable and efficient MOSFET for power management or industrial applications may find the FDC637AN a suitable choice.
N-Channel 20V 6.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
N-Channel 20V 6.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
N-Channel 20V 6.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015915-FDC637AN
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: FDC637AN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.2A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 16nC @ 4.5V
Max Input Capacitance: 1125pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 24 mOhm @ 6.2A, 4.5V
Alternative Parts (Cross-Reference): RUQ050N02FRATR; RUQ050N02HZGTR; Si3464DV-T1-GE3; Si3464DV;
Introduction Date: December 29, 1999
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs
MOSFET N-CH 20V 6.2A SUPERSOT6
MOSFET N-CH 20V 6.2A SUPERSOT6
MOSFET N-CH 20V 6.2A SSOT-6
N CHANNEL MOSFET, 20V, 6.2A, SUPER SOT-6; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:820mV RoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:820mV; Power Dissipation:1.6W RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDC637ANDKR-ND | 015915-FDC637AN | FDC637AN | FDC637AN | FDC637AN | 598-FDC637AN | 58K8825 | 67R2038 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC637AN | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 20V 6.2A SSOT-6 | N Channel Mosfet, 20V, 6.2A, Super Sot-6; Channel Type Onsemi | Mosfet, Full Reel; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; SuperSOT-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 | TO-3 | ||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||
| PD | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
