onsemi Single FETs, MOSFETs FDC637AN-NB5E023A

The FDC637AN is an N-channel MOSFET designed for low-voltage switching applications such as DC/DC converters, load switches, and battery protection. It is housed in a SUPERSOT-6 package, which measures 1 mm in height and offers a 72% smaller footprint than a standard SO-8 package. The device has a continuous drain current of 6.2 A and a drain-source breakdown voltage of 20 V. On-resistance is 24 mΩ at VGS = 4.5 V and 32 mΩ at VGS = 2.5 V, with a total gate charge of 10.5 nC typical. The package is Pb-free, halogen-free, and RoHS compliant. Thermal resistance from junction to ambient is 78 °C/W on a 1 in², 2 oz. copper pad. Operating and storage junction temperatures range from -55°C to +150°C.