onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC636P FDC636P

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038029-FDC636P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 8.5nC @ 4.5V Max Input Capacitance: 390pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 130 mOhm @ 2.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Application Field: Used in Automotive
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038029-FDC636P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 8.5nC @ 4.5V Max Input Capacitance: 390pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 130 mOhm @ 2.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Application Field: Used in Automotive
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC636P - 1038029-FDC636P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC636P
1038029-FDC636P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC636P 1038029-FDC636P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038029-FDC636P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 8.5nC @ 4.5V Max Input Capacitance: 390pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 130 mOhm @ 2.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Application Field: Used in Automotive

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038029-FDC636P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 8.5nC @ 4.5V
Max Input Capacitance: 390pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 130 mOhm @ 2.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Application Field: Used in Automotive

Buy Now Datasheet
Single FETs, MOSFETs - FDC636PTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC636PTR-ND
Single FETs, MOSFETs FDC636PTR-ND
P-Channel 20V 2.8A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

P-Channel 20V 2.8A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC636P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDC636P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDC636P
MOSFET P-CH 20V 2.8A SUPERSOT6

MOSFET P-CH 20V 2.8A SUPERSOT6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1038029-FDC636P FDC636PTR-ND FDC636P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC636P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts
PD 1600 milliwatts
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